Investigation of the Cr3+ impurity luminescence in proton-irradiated β-Ga2O3
Davydov V. Yu.1, Smirnov A. N. 1, Eliseyev I. A.1, Kitaev Yu. E. 1, Sharofidinov S. S. 1, Lebedev A. A. 1, Panov D. I.2, Spiridonov V. A. 2, Bauman D. A. 2, Romanov A. E. 1,2, Kozlovski V. V. 3
1Ioffe Institute, St. Petersburg, Russia
2 ITMO University, St. Petersburg, Russia
3Peter the Great Saint-Petersburg Polytechnic University, St. Petersburg, Russia
Email: valery.davydov@mail.ioffe.ru

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Proton irradiation of β-Ga2O3 crystals has been established to lead to a significant increase in the amount of Cr3+ ions being active in luminescence. Using angle-resolved luminescence, the features of the spectra of Cr3+ ions were studied. The high sensitivity of photoluminescence spectra and the related selection rules to the local symmetry of Cr3+ ions in the β-Ga2O3 matrix has been found. The results obtained indicate the potential possibility of using β-Ga2O3 crystals as optical dosimeters of proton irradiation. Keywords: β-Ga2O3, α-Ga2O3, proton irradiation, photoluminescence, symmetry analysis.
  1. N. Manikanthababu, H. Sheoran, P. Siddham, R. Singh. Crystals, 12, 1009 (2022). DOI: 10.3390/cryst12071009
  2. D.A. Bauman, D.I. Panov, D.A. Zakgeim, V.A. Spiridonov, A.V. Kremleva, A.A. Petrenko, P.N. Brunkov, N.D. Prasolov, A.V. Nashchekin, A.M. Smirnov, M.A. Odnoblyudov, V.E. Bougrov, A.E. Romanov. Phys. Status Solidi A, 218, 2100335 (2021). DOI: 10.1002/pssa.202100335
  3. L. Dong, R. Jia, B. Xin, Y. Zhang. J. Vac. Sci. Technol. A, 34, 060602 (2016). DOI: 10.1116/1.4963376
  4. T. Onuma, Y. Nakata, K. Sasaki, T. Masui, T. Yamaguchi, T. Honda, A. Kuramata, S. Yamakoshi, M. Higashiwaki. J. Appl. Phys., 124, 075103 (2018). DOI: 10.1063/1.5030612
  5. T.T. Huynh, L.L.C. Lem, A. Kuramata, M.R. Phillips, C. Ton-That. Phys. Rev. Mater., 2, 105203 (2018). DOI: 10.1103/PhysRevMaterials.2.105203
  6. Y. Tokuda, S. Adachi. J. Appl. Phys., 112, 063522 (2012). Doi.org/10.1063/1.4754517
  7. A. Luchechko, V. Vasyltsiv, Ya. Zhydachevskyy, M. Kushlyk, S. Ubizskii, A. Suchocki. J. Phys. D: Appl. Phys., 53, 354001 (2020). DOI: 10.1088/1361-6463/ab8c7d
  8. G. Naresh-Kumar, H. MacIntyre, S. Subashchandran, P.R. Edwards, R.W. Martin, K. Daivasigamani, K. Sasaki, A. Kuramata. Phys. Status Solidi B, 258, 2000465 (2021). DOI: 10.1002/pssb.202000465
  9. M. Peres, D.M. Esteves, B.M.S. Teixeira, J. Zanoni, L.C. Alves, E. Alves, L.F. Santos, X. Biquard, Z. Jia, W. Mu, J.Rodrigues, N.A. Sobolev, M.R. Correia, T. Monteiro, N. Ben Sedrine, K. Lorenz. Appl. Phys. Lett., 120, 261904 (2022). DOI: 10.1063/5.0089541
  10. A. Fiedler, Z. Galazka, K. Irmscher. J. Appl. Phys., 126, 213104 (2019). DOI: 10.1063/1.5125774
  11. J.E. Stehr, M. Jansson, D.M. Hofmann, J. Kim, S.J. Pearton, W.M. Chen, I.A. Buyanova. Appl. Phys. Lett., 119, 052101 (2021). DOI: 10.1063/5.0060628
  12. H.H. Tippins. Phys. Rev., 137, A865 (1965). DOI: 10.1103/PhysRev.137.A865
  13. R. Sun, Y.K. Ooi, P.T. Dickens, K.G. Lynn, M.A. Scarpulla. Appl. Phys. Lett., 117, 052101 (2020). DOI: 10.1063/5.0012967

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