Low resistance state degradation during endurance measurements in HfO2/HfOXNY-based structures
Permyakova O. O. 1,2, Rogozhin A. E. 1, Myakonkih A. V. 1, Rudenko K. V.1
1Valiev Institute of Physics and Technology of RAS, Moscow, Russia
2Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Moscow Region, Russia
Email: o.permyakova@phystech.edu

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The mechanism of resistive switching in Pt/HfO2(8 nm)/HfOXNY(4 nm)/TiN structures, in which there are two resistive switching modes: bipolar resistive switching and complementary resistive switching. We demonstrate that resistive switching without external current compliance is possible. It is shown experimentally that the conductivity in the low-resistance state corresponds to the space-charge-limited current. A qualitative model is proposed that describes the transition from bipolar resistive switching to complementary resistive switching using Schottky barrier modulation at the metal-insulator interface. Based on this model, an explanation is given for the degradation of the low-resistance state during endurance measurements. Keywords: memristor, hafnium oxide, complementary resistive switching, bipolar resistive switching, endurance.
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