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Top-down formation of biocompatible SiC nanotubes
Russian version
Bouravleuv A. D. 1,2,3,4, Kazakin A. N.5, Nashchekina Yu. A.3,6, Nashchekin A. V.3, Ubyyvovk E. V.3, Astrahanceva V. A.1, Osipov A. V.7, Svyatec G. V.8, Kukushkin S.A.7
1St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
2AN HEO "University associated with IA EAEC", Saint-Petersburg, Russia
3Ioffe Institute, St. Petersburg, Russia
4Institute for Analytical Instrumentation of the Russian Academy of Sciences, Saint Petersburg, Russia
5Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
6Institute of Cytology Russian Academy of Science, Saint-Petersburg, Russia
7Institute for Problems in Mechanical Engineering of the Russian Academy of Sciences, St. Petersburg, Russia
8Scientific and Technical Center New Technologies ( STC NT), Saint-Petersburg, Russia
Email: bour@mail.ioffe.ru
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It was found that the synthesis of silicon carbide epitaxial layers on silicon by coordinated substitution of atoms can be accompanied by the formation of silicon carbide nanotubes growing deep into silicon substrates. That is, for the first time discovered a new "top-down" mechanism for the formation of silicon carbide nanotubes. Keywords: silicon carbide, nanotubes, vapor-liquid-crystal, nanostructure formation.
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