Volumes and Issues
Home » Semiconductors » Year 2023, issue 4 » Article p. 283
<<<>>>
Temperature Dependence of Dislocation-Related Electroluminescence in Silicon Light-Emitting Diodes Containing Oxygen Precipitates
Russian version
DOI: 10.61011/SC.2023.04.56427.4810
Sobolev N. A.1, Kalyadin A. E.1, Shtel`makh K. F.1, Aruev P. N.1, Zabrodskiy V. V.1, Shek E. I.1
1Ioffe Institute, St. Petersburg, Russia
Email: nick@sobolev.ioffe.rssi.ru
PDF
Electroluminescence has been studied in silicon light-emitting diodes containing oxygen precipitates at temperatures of 40-300 K. Oxygen ion implantation and multistage anneals are used for fabrication of the diodes. Over all temperature range, spectra are well approximated by one Lorentz and four Gaussian curves. Lines of dislocation-related luminescence D1-D4 (the D1 line is described by Lorentz curve) and oxygen precipitates (OPs) are present in the spectra. At temperature variation, peak positions of the D1, OP and D2 lines coincide with temperature dependence of the forbidden gap width reduced by values of 356, 330 and 303 meV respectively. Build and quenching areas are observed on temperature dependences of the electroluminescence intensities of the D1, OP and D2 lines, the activation energies of the processes are determined, and reasons of their appearance are discussed. Keywords: Light-Emitting Diodes, Dislocation-Related Luminescence, Silicon, Oxygen Precipitates. DOI: 10.61011/SC.2023.04.56427.4810
  1. N.A. Drozdov, A.A. Patrin, V.D. Tkachev. JETP Lett., 23, 597 (1976)
  2. N.A. Sobolev. Semiconductors, 44 (1), 1 (2010)
  3. N.A. Sobolev, A.E. Kalyadin, M.V. Konovalov, P.N. Aruyev, V.V. Zabrodsky, E.I. Shek, K.F. Shtelmakh, A.N. Mikhailov, D.I. Tetelbaum. Semiconductors, 50 (2), 240 (2016)
  4. A. Tereshchenko, D. Korolev, M. Khorosheva, A. Mikhaylov, A. Belov, A. Nikolskaya, D. Tetelbaum. Phys. Status Solidi A, 216, 1900323 (2019)
  5. E.O. Sveinbjornsson, J. Weber. Appl. Phys. Lett., 69, 2686 (1996)
  6. V. Kveder, V. Badylevich, E. Steinman, A. Izotov, M. Zeibt, W. Schreter. Appl. Phys. Lett., 84, 2106 (2004)
  7. N.A. Sobolev, A.M. Emel'yanov, V.V. Zabrodskii, N.V. Zabrodskaya, V.L. Sukhanov, E.I. Shek. Semiconductors, 41 (5), 616 (2007)
  8. A. Borghesi, B. Pivac, A. Sassella, A. Stella. J. Appl. Phys., 77, 4169 (1995)
  9. S. Binetti, S. Pizzini, E. Leoni, R. Somaschini, A. Castaldini, A. Cavallini. J. Appl. Phys., 92, 2437 (2002)
  10. K. Bothe, R.J. Falster, J.D. Murphy. Appl. Phys. Lett., 101, 032107 (2012)
  11. N.A. Sobolev, A.E. Kalyadin, K.F. Shtel'makh, E.I. Shek. Semiconductors, 55 (12), 891 (2021)
  12. N.A. Sobolev, A.E. Kalyadin, K.F. Shtel'makh, P.N. Aruev, V.V. Zabrodskiy, E.I. Shek. Semiconductors, 56 (9), 685 (2022)
  13. J.F. Ziegler, M.D. Ziegler, J.P. Biersack. Nucl. Instr. Meth. B, 268, 1818 (2010)
  14. http://www.srim.org
  15. N.A. Sobolev, A.M. Emel`yanov, E.I. Shek, O.V. Feklisova, E.B. Yakimov, T.V. Kotereva. Phys. Status Solidi C, 2 (6), 1842 (2005)
  16. R. Sauer, J. Weber, J. Stolz, E.R. Weber, K.H. Kurster, H. Alexander. Appl. Phys. A, 36, 1 (1985)
  17. S. Binetti, R. Somaschini, A. Le Donne, E. Leoni, S. Pizzini, D. Li, D. Yang. J. Phys.: Condens. Matter, 14, 13247 (2002)
  18. Luelue Xiang, Dongsheng Li, Lu Jin, Shuming Wang, Deren Yang. J. Appl. Phys., 113, 033518 (2013)
  19. L.I. Fedina, A.K. Gutakovskii, T.S. Shamirzaev. J. Appl. Phys., 124, 053106 (2018)
  20. V.I. Vdovin, L.I. Fedina, A.K. Gutakovskii, A.E. Kalyadin, E.I. Shek, K.F. Shtel'makh, N.A. Sobolev. Crystallogr. Rep., 66, 625 (2021)
  21. V. Alex, S. Finkbeiner, J. Weber. J. Appl. Phys., 79, 6943 (1996)
  22. E.A. Steinman, A.N. Tereshchenko, N.V. Abrosimov. Solid State Phenomena, 131--133, 607 (2008)
  23. A.E. Kalyadin, K.F. Shtelmakh, P.N. Aruev, V.V. Zabrodsky, K.V. Karabeshkin, E.I. Shek, N.A. Sobolev. Semiconductors, 54 (6), 687 (2020)
  24. G. Davies. Phys. Reports, 176, 83 (1989)
  25. E.A. Steinman, O. Kononchuk, A.N. Tereshchenko, A.A. Mazilkin. Solid State Phenomena, 156--158, 555 (2010)
  26. A.N. Tereshchenko, D.S. Korolev, A.N. Mikhailov, A.I. Belov, A.A. Nikolskaya, D.A. Pavlov, D.I. Tetelbaum, E.A. Steinman. Semiconductors, 52 (7), 843 (2018)
  27. K.L. Shaklee, R.E. Nahory. Phys. Rev. Lett., 24, 942 (1970)

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru