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Crossover between Mott's and Arrhenius' laws in the temperature dependence of resistivity of highly boron-doped delta-layers in artificial diamond
Experimental temperature dependence of the resistivity of thin (1-3 nm) highly boron-doped (close to the threshold of the phase transition into a state with a metallic-type conductivity) delta-layers in chemically vapor deposited (CVD) diamond in a broad temperature range from ~100 to ~500 K can be described by Mott's two-dimensional law (hole "hops" between localized states with a temperature-dependent average "hop" length) in a low temperature region and Arrhenius' law (hole "hops" between the nearest localized states) in a high temperature region. The crossover between them takes place at 230-300 K. The potentials of hole localized states are of a long-range, e. g. Coulomb's, type, the static dielectric permittivities of delta-layers are by several times larger than those of undoped CVD diamond. Keywords: CVD diamond, Arrhenius law, Mott's law, doped delta-layers, "jump" conductivity, phase transition insulator-metal. DOI: 10.61011/SC.2023.04.56422.10k
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