Simulation of the energy-band structure of superlattice of quaternary alloys of diluted nitrides
Dashkov A.S. 1, Kostromin N. A. 2, Babichev A. V. 3, Goray L.I. 1, Egorov A. Yu. 1
1Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
2Peter the Great Saint-Petersburg Polytechnic University, St. Petersburg, Russia
3 ITMO University, St. Petersburg, Russia
Email: dashkov.alexander.om@gmail.com

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The paper describes an algorithm for computing the interband transition energy for superlattices of quaternary solid solutions of diluted nitrides. Using the described method, the authors have conducted several numerical simulations of test structures with InGaAsN quantum wells for the method verification using experimental data and comparison with other approaches. Simulation results showed the validity of the used approach. The hybridization parameter estimation method for Indium mole-fraction below 30% is presented. Based on simulation results, the authors propose InGaAs/GaAsN superlattices' parameters for the implementation of the source emitting in the 1.3 μm spectral range Keywords: superlattices, diluted nitrides, interband transitions, numerical simulations, hybridization parameter.
  1. C. Skierbiszewski, P. Perlin, P. Wisniewski, T. Suski, J.F. Geisz, K. Hingerl, W. Jantsch, D.E. Mars, W. Walukiewicz. Phys. Rev. B, 65 (3), 035207 (2001)
  2. A. Erol. Dilute III-V Nitride Semiconductors and Material Systems (Berlin-Heidelberg-N. Y., Springer Verlag, 2008)
  3. T. Sarmiento, Li Zhao, P. Moser, T. Li, Y. Huo, J.S. Harris. IEEE Phot. Techn. Lett., 31 (20), 1607 (2019)
  4. A.S. Gudovskikh, A.A. Lazarenko, E.V. Pirogov, M.S. Sobolev, K.S. Zelentsov, I.A. Morozov, A.Yu. Egorov. Semiconductors, 50 (5), 652 (2016)
  5. M. Henini. Dilute nitride semiconductors (Amsterdam--Boston--Heidelberg--London--N. Y.--Oxford--Paris--San Diego--San Francisco--Singapore--Sydney--Tokyo, Elsevier, 2005)
  6. Y. Onishi, N. Saga, K. Koyama, H. Doi, T. Ishizuka, T. Yamada, K. Fujii, H. Mori, J.Hashimoto, M. Shimazu, A. Yamaguchi, T. Katsuyama. IEEE J. Select. Topics Quant. Electron., 15 (3), 838 (2009)
  7. J. Vukusic, P. Modh, A. Larsson, M. Hammar, S. Mogg, U. Christiansson, V. Oscarsson, E. Odling, J. Malmquist, M. Ghisoni, P. Gong, E. Griffiths, A. Joel. Electron. Lett., 39 (8), 662 (2003)
  8. H. Riechert, A. Ramakrishnan, G. Steinle. Semicond. Sci. Techn., 17 (8), 892 (2002)
  9. G. Steinle, H. Riechert, A.Yu. Egorov. Electron. Lett., 37 (2), 93 (2001)
  10. M. G ebski, D. Dontsova, N. Haghighi, K. Nunna, R. Yanka, A. Johnson, R. Pelzel, J.A. Lott. OSA Continuum, 3 (7), 1952 (2020)
  11. A. Babichev, S. Blokhin, A. Gladyshev, L. Karachinsky, I. Novikov, A. Blokhin, M. Bobrov, N. Maleev, V. Andryushkin, E. Kolodeznyi, D. Denisov, N. Kryzhanovskaya, K. Voropaev, V. Ustinov, A. Egorov, H. Li, S. Tian, S. Han, G. Sapunov, D. Bimberg. IEEE Phot. Techn. Lett., 35 (6), 297 (2023)
  12. A.V. Babichev, L.Y. Karachinsky, I.I. Novikov, A.G. Gladyshev, S.A. Blokhin, S. Mikhailov, V. Iakovlev, A. Sirbu, G. Stepniak, L. Chorchos, J.P. Turkiewicz. IEEE J. Quant. Electron., 53 (6), 1 (2017)
  13. S. Blokhin, A. Babichev, A. Gladyshev, L. Karachinsky, I. No\=vikov, A. Blokhin, S. Rochas, D. Denisov, K. Voropaev, A. Ionov, N. Ledentsov, A. Egorov. Electron. Lett., 57, 697 (2021)
  14. S.A. Blokhin, A.V. Babichev, A.G. Gladyshev, L.Ya. Karachinsky, I.I. Novikov, A.A. Blokhin, M.A. Bobrov, N.A. Maleev, V.V. Andryushkin, D.V. Denisov, K.O. Voropaev, I.O. Zhumaeva, V.M. Ustinov, A.Yu. Egorov, N.N. Ledentsov. IEEE J. Quant. Electron., 58 (2), 2400115 (2022)
  15. S.A. Blokhin, A.V. Babichev, A.G. Gladyshev, I.I. Novikov, A.A. Blokhin, M.A. Bobrov, N.A. Maleev, V.V. Andryushkin, D.V. Denisov, K.O. Voropaev, V.M. Ustinov. Opt. Eng., 61 (9), 096109 (2022)
  16. N.V. Kryzhanovskaya, A.I. Likhachev, S.A. Blokhin, A.A. Blokhin, E.V. Pirogov, M.S. Sobolev, A.V. Babichev, A.G. Gladyshev, L.Ya. Karachinsky, I.I. Novikov, V.V. Andryushkin, D.V. Denisov, A.Yu. Egorov. Laser Phys. Lett., 19 (7), 075801 (2022)
  17. M. Albrecht, V. Grillo, T. Remmele, H.P. Strunk, A.Yu. Egorov, Gh. Dumitras, H. Riechert, A. Kaschner, R. Heitz, A. Hoffmann. Appl. Phys. Lett., 81 (15), 2719 (2002)
  18. A.S. Dashkov, L.I. Goray. J. Phys.: Conf. Ser., 1410, 012085 (2019)
  19. A.S. Dashkov, L.I. Goray. J. Semicond., 54, 1823 (2020)
  20. C. Jirauschek, T. Kubis. Appl. Phys. Rev., 1 (1), 011307 (2014)
  21. I. Vurgaftman, J.R. Meyer, L.R. Ram-Mohan. J. Appl. Phys., 89 (11), 5815 (2001)
  22. A.R. Denton, N.W. Ashcroft. Phys. Rev. A, 43 (6), 3161 (1991)
  23. A.Yu. Egorov. Avtoref. dokt. dis. (SPb, SPbAU RAN, 2011)
  24. W. Shan, W. Walukiewicz, J.W. Ager III, E.E. Haller, J.F. Geisz, D.J. Friedman, J.M. Olson, Sarah R. Kurtz. J. Appl. Phys., 86 (4), 2349 (1999)
  25. Y.T. Lin, T.C. Ma, T.Y. Chen, H.H. Lin. Appl. Phys. Lett., 93 (17), 171914 (2008)
  26. A. Aho, M. Korpijarvi, R. Isoahoa, P. Malinen, A. Tukiainen, M. Honkanen, M. Guina. J. Cryst. Growth, 438, 49 (2016)
  27. R. Isoaho, A. Aho, A. Tukiainen, T. Salminen, M. Guina. J. Cryst. Growth, 584, 126574 (2022)
  28. R.J. Potter, N. Balkan. J. Phys. Condens. Matter, 16 (31), S3387 (2004)
  29. D. Alexandropoulos, M.J. Adams. IEE Proc. Optoelectron., 150 (2), 105 (2003)
  30. I. Vurgaftman, J.R. Meyer. J. Appl. Phys., 94 (6), 3675 (2003)
  31. S.A. Choulis, S. Tomic, E.P. O'Reilly, T.J.C. Hosea. Solid State Commun., 125 (3-4), 155 (2003)
  32. S.A. Choulis, T.J.C. Hosea, S. Tomic, M. Kamal-Saadi, A.R. Adams, E.P. O'Reilly, B.A. Weinstein, P.J. Klar. Phys. Rev. B, 66 (16), 165321 (2002)
  33. Z. Pan, L.H. Li, Y.W. Lin, B.Q. Sun, D.S. Jiang, W.K. Ge. Appl. Phys. Lett., 78 (15), 2217 (2001)
  34. A.Yu. Egorov, V.A. Odnoblyudov, N.V. Krizhanovskaya, V.V. Mamutin, V.M. Ustinov. Semiconductors, 36 (12), 1355 (2002)
  35. A. Polimeni, M. Capizzi, M. Geddo, M. Fischer, M. Reinhardt, A. Forchel. Phys. Rev. B, 63 (19), 195320 (2001)
  36. S.A. Choulis, T.J.C. Hosea, S. Tomic, M. Kamal-Saadi, B.A. Weinstein, E.P. O'Reilly, A.R. Adams, P.J. Klar. Phys. Status Solidi B, 235 (2), 384 (2003)
  37. H.D. Sun, M.D. Dawson, M. Othman, J.C.L. Yong, J.M. Rorison, P. Gilet, L. Grenouillet, A. Million. Appl. Phys. Lett., 82 (3), 376 (2003).
  38. W. Shan, W. Walukiewiez, J.W. Ager, E.E. Haller, J.F. Geisz, D.J. Friedman, J.M. Olson, S.R. Kurtz. Phys. Rev. Lett., 82 (6), 1221 (1999)
  39. P.J. Klar, H. Gruning, W. Heimbrodt, J. Koch, W. Stolz, P.M.A. Vicente, A.M. Kamal Saadi, A. Lindsay, E.P. O'Reilly. Phys. Status Solidi, 223 (1), 163 (2001)
  40. A. Lindsay, E.P. O'Reilly. Solid State Commun., 112 (8), 443 (1999)
  41. W. Shan, W. Walukiewicz, K.M. Yu, J.W. III Ager, E.E. Haller, J.F. Geisz, D.J. Friedman, J.M. Olson, S.R. Kurtz, H.P. Xin, C.W. Tu. Phys. Status Solidi, 223 (1), 75 (2001)
  42. I. Suemune, K. Uesugi, W. Walukiewicz. Appl. Phys. Lett., 77 (19), 3021 (2000)
  43. P. Perlin, P. Wisniewski, C. Skierbiszewski, T. Suski, E. Kaminska, S.G. Subramanya, E.R. Weber, D.E. Mars, W. Walukiewicz. Appl. Phys. Lett., 76 (10), 1279 (2000)
  44. C. Skierbiszewski, P. Perlin, P. Wisniewski, T. Suski, W. Walukiewicz, W. Shan, J.W. III Ager, E.E. Haller, J.F. Geisz, D.J. Friedman, J.M. Olson, S.R. Kurtz. Phys. Status Solidi, 216 (1), 135 (1999)
  45. P.J. Klar, H. Gruning, J. Koch, S. Schafer, K. Volz, W. Stolz, W. Heimbrodt, A.M. Kamal Saadi, A. Lindsay, E.P. O'Reilly. Phys. Rev. B, 64 (12), 121203 (2001)
  46. X. Yang, M.J. Jurkovic, J.B. Heroux, W.I. Wang. Appl. Phys. Lett., 75 (2), 178 (1999)
  47. E.D. Jones, N.A. Modine, A.A. Allerman, I.J. Fritz, S.R. Kurtz, A.F. Wright, S.T. Tozer, X. Wei. In Light-Emitting Diodes: Research, Manufacturing, and Applications III (San Jose, California, USA, 1999) v. 3621, p. 52
  48. M. Kondow, T. Kitatani, S. Nakatsuka, M.C. Larson, K. Nakahara, Y. Yazawa, M. Okai, K. Uomi. IEEE J. Select. Topics Quant. Electron., 3 (3), 719 (1997)
  49. S. Tomic, E. O'Reilly, R. Fehse, S. Sweeney, A. Adams, A. Andreev, S. Choulis, T. Hosea, H. Riechert. IEEE J. Select. Topics Quant. Electron., 9 (5), 1228 (2003)
  50. A. Egorov, D. Bernklau, B. Borchert, S. Illek, D. Livshits, A. Rucki, M. Schuster, A. Kaschner, A. Hoffmann, Gh. Dumitras, M. Amann, H. Riechert. J. Cryst. Growth, 227-228 (1-4), 545 (2001)
  51. H. Riechert, A.Yu. Egorov, D. Livshits, B. Borchert, S. Illek. Nanotechnology, 11 (4), 201 (2000)
  52. R. Johnson, V. Blasingame, J. Tatum, B.S. Chen, D. Mathes, J. Orenstein, T.Y. Wang, J. Kim, Ho-Ki Kwon, J.H. Ryou, G. Park, E. Kalweit, H. Chanhvongsak, M. Ringle, T. Marta, J. Gieske. Proc. SPIE, 4994, 222 (2003)
  53. G.L. Bir, G.E. Pikus. Symmetry and Strain-Induced Effects in Semiconductors (N. Y., Wiley, 1974)
  54. J.D. Cooper, A. Valavanis, Z. Ikonic, P. Harrison, J.E. Cunningham. J. Appl. Phys., 108 (11), 113109 (2010)
  55. C. Jirauschek. IEEE J. Quant. Electron., 45 (9), 1059 (2009)
  56. A.V. Babichev, E.V. Pirogov, M.S. Sobolev, D.V. Denisov, N.A. Fominykh, A.I. Baranov, A.S. Gudovskikh, I.A. Melnichenko, P.A. Yunin, V.N. Nevedemsky, M.V. Tokarev, B.Ya. Ber, A.G. Gladyshev, L.Ya. Karachinsky, I.I. Novikov, A.Yu. Egorov. FTP, 56 (10), 1002 (2022). (in Russian)
  57. A.V. Babichev, E.V. Pirogov, M.S. Sobolev, D.V. Denisov, H.A. Fominykh, A.I. Baranov, A.S. Gudovskikh, I.A. Melnichenko, P.A. Yunin, V.N. Nevedomsky, M.V. Tokarev, B.Ya. Ber, A.G. Gladyshev, L.Ya. Karachinsky, I.I. Novikov, A.Yu. Egorov. Semiconductors, 56 (10), 782 (2022).
  58. M.M. AI-Jassim, M.M. Goral, J.P. Sheldon, P. Jones, K.M. MRS Online Proc. Libr. (OPL), 144, 183 (1988)
  59. A.M. Mintairov, T.H. Kosel, J.L. Merz, P.A. Blagnov, A.S. Vlasov, V.M. Ustinov, R.E. Cook. Phys. Rev. Lett., 87 (27), 277401 (2001)
  60. A. Babichev, S. Blokhin, E. Kolodeznyi, L. Karachinsky, I. Novikov, A.Egorov, S.C. Tian, D. Bimberg. Photonics, 10 (3), 268 (2023)
  61. J. Jewell, L. Graham, M. Crom, K. Maranowski, J. Smith, T. Fanning, M. Schnoes. Phys. Status Solidi C, 5 (9), 295 (2008).

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