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Initial stages of growth of the GaN(11\=22) layer on a nano-structured Si(113) substrate
Scanning electron microscopy was used to study of the initial stages of the formation of a semipolar GaN(1122) layer during Metalorganic Chemical Vapor Deposition on Si(113) substrates, on the surface of which U-shaped grooves with element sizes <100 nm (NP-Si(113)) were formed. It was found that NP-Si(113) substrates with a buffer AlN layer stimulate the formation of islands faceted by the planes m-GaN, c-GaN. It is shown that there is a predominant growth of the m-GaN facet in comparison with c-GaN.The experimental results correspond to the Gibbs-Curie-Wolff selection principle, but taking into account elastic stresses in the c-GaN plane. Keywords: semipolar gallium nitride, nano-structured substrate, silicon.
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