Effect of thermal annealing on the transport properties of Ti/AlGaN/GaN low-barrier Mott diodes
Vostokov N. V.1, Drozdov M. N.1, Kraev S. A.1, Khrykin O. I.1, Yunin P. A.1
1Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Email: vostokov@ipm.sci-nnov.ru
The influence of thermal annealing on the transport properties of Ti/AlGaN/GaN low-barrier Mott diodes with near-surface polarization-induced delta-doping has been studied. It is shown that annealing provides additional possibilities for controlling the effective barrier height of diodes, improving and fine-tuning their transport characteristics. Thermal annealing can be used to fabricate low-barrier diodes designed to operate at high temperatures. Keywords: low-barrier diode, GaN, transport properties, thermal annealing.
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