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Formation and properties of mesoporous MoS2 films
Loginov A. B.
1, Bokova-Sirosh S. N. 2,3, Fedotov P. V. 2,3, Sapkov I. V. 1, Chmelenin D. N. 4, Ismagilov R. R. 1, Obraztsova E. D. 2,3, Loginov B. A. 5, Obraztsov A. N.
1
1Department of Physics, Lomonosov Moscow State University, Moscow, Russia
2Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, Russia
3Moscow Institute of Physics and Technology (National Research University), Dolgoprudniy, Moscow Region, Russia
4Shubnikov Institute of Crystallography “Crystallography and Photonics”, Russian Academy of Sciences, Moscow, Russia
5National Research University of Electronic Technology, Zelenograd, Moscow, Russia
2Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, Russia
3Moscow Institute of Physics and Technology (National Research University), Dolgoprudniy, Moscow Region, Russia
4Shubnikov Institute of Crystallography “Crystallography and Photonics”, Russian Academy of Sciences, Moscow, Russia
5National Research University of Electronic Technology, Zelenograd, Moscow, Russia
Email: loginov.ab15@physics.msu.ru
Molybdenum disulfide is a crystalline material which attracts considerable attention due to explicit two-dimensional character of its electronic properties. To obtain MoS2 films thermally evaporated molybdenum and gaseous H2S were used as precursors in this work. As a result of chemical reaction of these precursors films consisting of flake-like of nanometer thickness assembled from parallel atomic layers with predominantly perpendicular (with respect to substrate surface) orientation were deposited on the surface of Si substrate. In this work we investigate the dependence of film morphology on deposition time, substrate temperature and concentration of precursors in gaseous phase. Presence of mono- and bi-layered structures in the film was revealed using Raman spectroscopy and electron microscopy. Dependence of photoluminescence properties on size of crystallites in produced films was also studied. Keywords: 2D materials, transition metal dichalcogenides, flakes, monolayers, mesoporous films.
- Y. Sheng, T. Chen, Y. Lu, R.-J. Chang, S. Sinha, J. H. Warner. ACS Nano, 13 (4), 4530 (2019)
- J. Yao, G. Yang. Small., 14 (21), 1704524 (2018)
- A.K. Geim, K.S. Novoselov. Nature Materials, 6, 183 (2007)
- F. Schwierz. Nature Nanotechnol., 5 (7), 487 (2010)
- G.R. Bhimanapati, Z. Lin, V. Meunier, Y. Jung, J. Cha, S. Das, D. Xiao, Y. Son, M.S. Strano, V.R. Cooper, L. Liang, S.G. Louie, E. Ringe, W. Zhou, S.S. Kim, R.R. Naik, B.G. Sumpter, H. Terrones, F. Xia, Y. Wang, J. Zhu, D. Akinwande, N. Alem, J.A. Schuller, R.E. Schaak, M. Terrones, J.A. Robinson. ACS Nano, 9 (12), 11509 (2015)
- S. Manzeli, D. Ovchinnikov, D. Pasquier, O.V. Yazyev, A. Kis. Nature Rev. Mater., 2, 17033 (2017)
- K.F. Mak, J. Shan. Nature Photonics, 10 (4), 216 (2016)
- Y.P. Feng, L. Shen, M. Yang, A. Wang, M. Zeng, Q. Wu, S. Chintalapati, C.-R. Chang. WIREs Comput. Mol. Sci., 7 (5) (2017)
- J.R. Schaibley, H. Yu, G. Clark, P. Rivera, J.S. Ross, K.L. Seyler, W. Yao, X. Xu. Nature Rev. Mater., 1 (11), 16055 (2016)
- B.W.H. Baugher, H.O.H. Churchill, Y. Yang, P. Jarillo-Herrero. Nano Lett., 13 (9), 4212 (2013)
- V.K. Kumar, S. Dhar, T.H. Choudhury, S.A. Shivashankar, S. Raghavan. Nanoscale, 7 (17), 7802 (2015)
- V.O. Borisov, R.R. Ismagilov, A.A. Zolotukhin, A.N. Obraztsov. J. Nanoelectron. Optoelectron., 8 (1), 100 (2013)
- A.B. Loginov, I.V. Bozhev, S.N. Bokova-Sirosh, E.D. Obraztsova, R.R. Ismagilov, B.A. Loginov, A.N. Obraztsov. Appl. Surf. Sci., 494, 1030 (2019)
- Y. Yu, C. Li, Y. Liu, L. Su, Y. Zhang, L. Cao. Sci. Rep., 3 (1), 1866 (2013)
- R.G. Zonov, G.M. Mikheev, A.N. Obraztsov, Yu.P. Svirko. Opt. Lett., 45 (7), 2022 (2020)
- M.H. Johari, M.S. Sirat, M.A. Mohamed, S.N.F. Mohd Nasir, M.A. Mat Teridi, A.R. Mohmad. Nanotechnology, 31 (30), 305710 (2020)
- J. Xie, H. Qu, J. Xin, X. Zhang, G. Cui, X. Zhang, J. Bao, B. Tang, Yi Xie. Nano Res., 10 (4), 1178 (2017)
- J. Xie, H. Qu, J. Xin, X. Zhang, G. Cui, X. Zhang, J. Bao, B. Tang, Y. Xie. Nano Res., 10 (4), 1178 (2017)
- A.B. Loginov, I.V. Bozhev, S.N. Bokova-Sirosh, E.D. Obraztsova, R.R. Ismagilov, B.A. Loginov, A.N. Obraztsov. Tech. Phys., 64 (11), 1666 (2019)
- S. Primig, H. Leitner, H. Clemens, A. Lorich, W. Knabl, R. Stickler. Int. J. Refract. Met. Hard Mater., 28 (6), 703 (2010)
- H. Li, Q. Zhang, C.C.R. Yap, B. Kang Tay, T.H.T. Edwin, A. Olivier, D. Baillargeat. Adv. Funct. Mater., 22 (7), 1385 (2012)
- R.T. Sam, T. Umakoshi, P. Verma. Sci. Rep., 10 (1), 21227 (2020)
- J. van Baren, G. Ye, J.-A. Yan, Z. Ye, P. Rezaie, P. Yu, Z. Liu, R. He, C.H. Lui. 2D Mater., 6 (2), 025022 (2019)
- R. Coehoorn, C. Haas, R.A. de Groot. Phys. Rev. B, 35 (12), 6203 (1987)
- K.F. Mak, C. Lee, J. Hone, J. Shan, T.F. Heinz. Phys. Rev. Lett., 105 (13), 136805 (2010)
- A. Steinhoff, J.-H. Kim, F. Jahnke, M. Rosner, D.-S. Kim, C. Lee, G.H. Han, M.S. Jeong, T.O. Wehling, C. Gies. Nano Lett., 15 (10), 6841 (2015)
- A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, F. Wang. Nano Lett., 10 (4), 1271 (2010)
- H.J. Conley, B. Wang, J.I. Ziegler, R.F. Haglund, S.T. Pantelides, K.I. Bolotin. Nano Lett., 13 (8), 3626 (2013)
- N. Saigal, V. Sugunakar, S. Ghosh. Appl. Phys. Lett., 108 (13), 132105 (2016)
- C. Zhang, A. Johnson, C.-L. Hsu, L.-J. Li, C.-K. Shih. Nano Lett., 14 (5), 2443 (2014)
- A.R. Klots, A.K.M. Newaz, B. Wang, D. Prasai, H. Krzyzanowska, J. Lin, D. Caudel, N.J. Ghimire, J. Yan, B.L. Ivanov, K.A. Velizhanin, A. Burger, D.G. Mandrus, N.H. Tolk, S.T. Pantelides, K.I. Bolotin. Sci. Rep., 4 (1), 6608 (2014)
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