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Home » Semiconductors » Year 2022, issue 10 » Article p. 761
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Molecular beam epitaxy of GaSb on vicinal Si(001) substrates: influence of the conditions of layer nucleation on their structural and optical properties
Russian version
DOI: 10.21883/SC.2022.10.54906.9954
Petrushkov M.O. 1, Putyato M.A. 1, Vasev A. V. 1, Abramkin D.S. 1,2, Emelyanov E.A. 1, Loshkarev I.D. 1, Komkov O. S. 3, Firsov D.D. 3, Preobrazhenskii V.V. 1
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State University, Novosibirsk, Russia
3St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
Email: maikdi@isp.nsc.ru, puma@isp.nsc.ru, vasev@isp.nsc.ru, demid@isp.nsc.ru, e2a@isp.nsc.ru, idl@isp.nsc.ru, okomkov@yahoo.com, d.d.firsov@gmail.com, pvv@isp.nsc.ru
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GaSb films were grown by molecular beam epitaxy on vicinal Si(001) substrates with miscut angles of 6o to the (111) plane. Films were formed on AlSb(001)/Al/As/Si, AlSb(001)/Al/As/Si, GaSb(001)/Ga/P/Si and GaSb(001)/P/Ga/Si transition layers. The influence of orientation, composition, and formation conditions of transition layers on the crystal perfection and optical properties of GaSb films was studied. The GaSb film grown on the GaSb(001)/Ga/P/Si(001) transition layer has the best structural and optical properties. Keywords: molecular beam epitaxy, GaSb on Si(001), crystallographic orientation of the film, transition layers, antiphase domains, crystal perfection.
  1. A. Joullie, P. Christol. Comptes Rendus Physique, 4 (6), 621 (2003)
  2. M. Razeghi, A. Haddadi, A.M. Hoang, E.K. Huang, G. Chen, S. Bogdanov, S.R. Darvish, F. Callewaert, R. McClintock. Infr. Phys. Technol., 59, 41 (2013)
  3. A. Nainani, T. Irisawa, Z. Yuan, B.R. Bennett, J. Brad Boos, Y. Nishi, K.C. Saraswat. IEEE Trans. Electron Dev., 58, 3407 (2011)
  4. G. Brammertz, Y. Mols, S. Degroote, V. Motsnyi, M. Leys, G. Borghs, M. Caymax. J. Appl. Phys., 99 (9), 093514 (2006)
  5. K. Mukherjee, C.H. Reilly, P.G. Callahan, G.G.E. Seward. J. Appl. Phys., 123 (16), 165701 (2018)
  6. M. Kawabe, T. Ueda. Jpn. J. Appl. Phys., 25 (4), L285 (1986)
  7. T. Ueda, S. Nishi, Y. Kawarada, M. Akiyama, K. Kaminishi. Jpn. J. Appl. Phys., 25 (9), L789 (1986)
  8. D.E. Aspnes, J. Ihm. Phys. Rev. Lett., 57 (24), 3054 (1986)
  9. T. Sakamoto, G. Hashiguchi. Jpn. J. Appl. Phys., 25 (1) L78(1986)
  10. D.J. Chadi. Phys. Rev. Lett., 59 (15), 1691 (1987)
  11. T. Nakayama, Y. Tanishiro, K. Takayanagi. Jpn. J. Appl. Phys., 26 (4), L280 (1987)
  12. R.D. Bringans, D.K. Biegelsen, L.E. Swartz. Phys. Rev. B, 44 (7), 3054 (1991)
  13. P.R. Pukite, P.I. Cohen. Appl. Phys. Lett., 50 (24), 1739 (1987)
  14. R.S. Becker, T. Kutsner, J.S. Vicker. J. Microsc., 152 (1), 157 (1988)
  15. T. Ide. Phys. Rev. B, 51 (3), 1722 (1995)
  16. M.D. Jackson, F.M. Leibsle, R.J. Cole, D.A.C. Gregory, D.A. Woolf, P. Weightman. J. Vac. Sci. Technol. B, 14 (4), 2424 (1996)
  17. T.R. Ohno, E.D. Williams. J. Vac. Sci. Technol. B, 8 (4), 874 (1990)
  18. J. Gryko, R.E. Allen. MRS Online Proceedings Library (OPL), 280, 65 (1993)
  19. J. Nogami, A.A. Baski, C.F. Quate. Appl. Phys. Lett., 58 (5), 475 (1991)
  20. Y.W. Mo. Phys. Rev. B, 48 (23), 17233 (1993)
  21. H.B. Elswijk, E.J. van Loenen. Ultramicroscopy, 42, 884 (1992)
  22. B. Garni, I.I. Kravchenko, C.T. Salling. Surf. Sci., 423 (1), 43 (1999)
  23. P. Sen, B.C. Gupta, I.P. Batra. Phys. Rev. B, 73 (8), 085319 (2006)
  24. Y. Wang, X. Chen, R.J. Hamers. Phys. Rev. B, 50 (7), 4534 (1994)
  25. J.W. Matthews, A.E. Blakeslee. J. Cryst. Growth, 27, 118 (1974)
  26. M. Niehle, J.B. Rodriguez, L. Cerutti, E. Tournie, A. Trampert. Phys. Status Solidi (RRL), 13 (10), 1900290 (2019)
  27. E.A. Emelyanov, D.F. Feklin, M.A. Putyato, B.R. Semyagin, A.K. Gutakovsky, V.A. Seleznev, A.P. Vasilenko, D.S. Abramkin, O.P. Pchelyakov, V.V. Preobrazhensky, N. Zhicuan, N. Haiqiao. Avtometriya, 50 (3), 13 (2014). (in Russian)
  28. M.A. Putyato, V.V. Preobrazhenskii, B.R. Semyagin, D.F. Feklin, N.A. Pakhanov, E.A. Emelianov, S.I. Chikichev. Semicond. Sci. Technol., 24 (5), 055014 (2009)
  29. R. Machida, R. Toda, S. Fujikawa, S. Hara, I. Watanabe, H.I. Fujishiro. Phys. Status Solidi B, 253 (4), 648 (2016)
  30. K. Akahane, N. Yamamoto, S. Gozu, A. Ueta, N. Ohtani. J. Cryst. Growth, 283 (3--4), 297 (2005)
  31. S.H. Vajargah, S. Ghanad-Tavakoli, J.S. Preston, R.N. Kleiman, G.A. Botton. J. Appl. Phys., 114 (11), 113101 (2013)
  32. H.S. Kim, Y.K. Noh, M.D. Kim, Y.J. Kwon, J.E. Oh, Y.H. Kim, J.Y. Lee, S.G. Kim, K.S. Chung. J. Cryst. Growth, 301, 230 (2007)
  33. M.A. Putyato, B.R. Semyagin, E.A. Emelyanov, D.F. Feklin, A.P. Vasilenko, V.V. Preobrazhensky. Izv. vuzov. Fizika, 53 (9/2), 293 (2010). (in Russian)
  34. A.I. Luferau, D.D. Firsov, O.S. Komkov. J. Phys.: Conf. Ser., 1400 (6), 066035 (2019)
  35. D.D. Firsov, O.S. Komkov, V.A. Solov'ev, P.S. Kop'ev, S.V. Ivanov. J. Phys. D: Appl. Phys., 49 (28), 285108 (2016)
  36. W. Jakowetz, W. Ruhle, K. Breuninger, M. Pilkuhn. Phys. Status Solidi A, 12 (1), 169 (1972)
  37. A. Georgakilas, J. Stoemenos, K. Tsagaraki, P. Komninou, N. Flevaris, P. Panayotatos, A. Christou. J. Mater. Res., 8 (8), 1908 (1993)
  38. P. Gay, P.B. Hirsch, A. Kelly. Acta Metallurgica, 1 (3), 315 (1953)
  39. V.M. Kaganer, O. Brandt, A. Trampert, K.H. Ploog. Phys. Rev. B, 72 (4), 045423 (2005)
  40. A. Letoublon, W. Guo, C. Cornet, A. Boulle, M. Veron, A. Bondi, O. Durand, T. Rohel, O. Dehaese, N. Chevalier, N. Bertru, A. Le Corre. J. Cryst. Growth, 323 (1), 409 (2011)
  41. W. Guo, A. Bondi, C. Cornet, A. Letoublon, O. Durand, T. Rohel, S. Boyer-Richard, N. Bertru, S. Loualiche, J. Even, A. LeCorre. Appl. Surf. Sci., 258 (7), 2808 (2012)
  42. M. Niehle, J.B. Rodriguez, L. Cerutti, E. Tournie, A. Trampert. Acta Mater., 143, 121 (2018)
  43. C.S.C. Barrett, A. Atassi, E.L. Kennon, Z. Weinrich, K. Haynes, X.-Y. Bao, P. Martin, K.S. Jones. J. Mater. Sci., 54 (9), 7028 (2019)
  44. A.C. Lin, M.M. Fejer, J.S. Harris. J. Cryst. Growth, 363, 258 (2013)
  45. R.M. Tromp, A.W.D. van der Gon, M.C. Reute. Phys. Rev. Lett., 68 (15), 2313 (1992)
  46. J. Wasserfall, W. Ranke. Surf. Sci., 315 (3), 227 (1994)
  47. M.L. Yu, D.J. Vitkavage, B.S. Meyerson. J. Appl. Phys., 59 (12), 4032 (1986)
  48. Z. Wang, H. Guo, S. Shao, M. Saghayezhian, J. Li, R. Fittipaldi, A. Vecchione, P. Siwakoti, Y. Zhu, J. Zhang, E.W. Plummer. PNAS, 115 (38), 9485 (2018)
  49. R.L. Schwoebel. J. Appl. Phys., 40 (2), 614 (1969)
  50. Y. Horikoshi, H. Yamaguchi, F. Briones, M. Kawashima. J. Cryst. Growth, 105 (1--4), 326 (1990)
  51. Y. Li, L.J. Giling. J. Cryst. Growth, 163 (3), 203 (1996)
  52. A.C. Lin, M.M. Fejer, J.S. Harris. J. Cryst. Growth, 363, 258 (2013)
  53. S.Y. Woo, S. Hosseini Vajargah, S. Ghanad-Tavakoli, R.N. Kleiman, G.A. Botton. J. Appl. Phys., 112 (7), 074306 (2012).

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