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Calcium fluoride films with 2-10 nm thickness on Silicon-(111): growth, diagnostics, study of the through current transport
Banshchikov A. G. 1, Vexler M. I.
1, Ivanov I.A.
1, Illarionov Yu. Yu. 1, Sokolov N. S. 1, Suturin S. M.
1
1Ioffe Institute, St. Petersburg, Russia
Email: vexler@mail.ioffe.ru, ivanovila673@mail.ru, suturin@mail.ioffe.ru
Epitaxial calcium fluoride (CaF2) layers with a nominal thickness up to 10 nm on the (111)-oriented Silicon (Si) are obtained. Surface topographies of the fluoride films are recorded and the current-voltage characteristics of the Au/CaF2/Si structures are studied. On a qualitative level, these structures exhibited all the features usual for metal-insulator-semiconductor systems. The current-voltage curves of the samples were reproduced by modeling considering a finite (0.1-1 nm) value of the standard thickness deviation of the dielectric CaF2 film. Keywords: calcium fluoride, thin films, MIS structure, leakage current.
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