Stimulated emission in the InAs/InAsSb/InAsSbP heterostructures with asymmetric electronic confinement
Semakova A. A. 1, Ruzhevich M. S.2, Romanov V. V. 1, Bazhenov N. L. 1, Mynbaev K. D. 1,2, Moiseev K. D. 1
1Ioffe Institute, St. Petersburg, Russia
2 ITMO University, St. Petersburg, Russia

The electroluminescent characteristics of the InAs/InAs1-ySby/InAsSbP asymmetric light-emitting diode heterostructures with high InSb mole fraction in the active region (y>0.09) in the temperature range 4.2-300 K have been studied. Stimulated emission was achieved in the wavelength range 4.1-4.2 μm at low temperatures (T<30 K). It was found that the electroluminescence spectra were formed as a result of the superposition of contributions from different channels of radiative recombination of charge carriers near the type II heterointerface. The effect of the quality of the type II InAsSb/InAsSbP heterojunction on the radiative interface transitions with an increase in the content of InSb in the ternary solid solution is considered. Keywords: heterojunctions, InAs, antimonides, electroluminescence, light-emitting diodes.
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