Semiconductors
To authors
Volumes and Issues
- 2024
- 2023
- 2022
Structure and morphology effects on sensing properties CdxPb1-xS films
Maskaeva L. N.
1,2, Vaganova I. V.1,2, Markov V. F.
1,2, Bezdetnova A. E.1, Selyanina A. D.1, Voronin V. I.
3, Selyanin I. O.1,4
1Ural Federal University after the first President of Russia B.N. Yeltsin, Yekaterinburg, Russia
2Ural Institute of State Fire Service of EMERCOM of Russia, Yekaterinburg, Russia
3M.N. Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, Yekaterinburg, Russia
4Institute of Solid State Chemistry, Russian Academy of Sciences, Ural Branch, Yekaterinburg, Russia
2Ural Institute of State Fire Service of EMERCOM of Russia, Yekaterinburg, Russia
3M.N. Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, Yekaterinburg, Russia
4Institute of Solid State Chemistry, Russian Academy of Sciences, Ural Branch, Yekaterinburg, Russia
Email: larisamaskaeva@yandex.ru
Polycrystalline films of CdxPb1-xS (0.021≤x≤0.090) supersaturated substitutional solid solutions with a cubic structure B1 (Fm3m space group) have been obtained with varying cadmium acetate salt Cd(CH3COO)2 in the reaction mixture within 0.01-0.10 mol/l on the sitall substrates. Their thickness changed from ~0.4 to ~1.0 microns. A correlation has been established between the structural-morphological and functional properties of CdxPb1-xS thin-film layers. The extreme character of the voltage sensitivity dependence on the cadmium salt concentration in the reaction bath is associated with the nonmonotonic introduction of cadmium into the PbS crystal lattice. It is shown that the maximum photocurrent is possessed by CdxPb1-xS thin-film layers formed from crystallites with pronounced faceting. We have found the surface sensitivity of the CdxPb1-xS films to the presence of ~0.02 mg/m3 NO2 in the air, which is significantly lower than the maximum allowable concentration. Keywords: chemical bath deposition, film morphology, structural properties, CdxPb1-xS solid solution, photosensitivity, sensing properties.
- W.W. Scanlon. J. Phys. Chem. Solids, 8, 423 (1959)
- P.M. Khanzode, D.I. Halge, V.N. Narwade, J.W. Dadge, K.A. Bogle. Optik, 226 (1), 165933 (2020)
- E. Pentia, V. Draghici, G. Sarau. J. Electrochem. Soc., 151 (11), G729 (2004)
- A. Ounissi, N. Ouddai, S. Achour. Eur. Phys. J. Appl. Phys., 37 (3), 241 (2007)
- V. Rakovics. Mat. Res. Soc. Symp. Proc., 900, 87 (2005)
- A.E. Rakhshani, B. Pradeep, H.A. Ramazaniyan. Chem. Sol. Deposit. of Semicond. and Non-Metal. Films: Proc. Int. Symp. Electrochem. Soc., 32, 49 (2006)
- P.L. Nichols, Z. Liu, L. Yin, S. Turkdogan, F. Fan, C.Z. Ning. Nano Lett., 15, 909 (2015)
- A.E. Bezdetnova, V.F. Markov, L.N. Maskaeva, Yu.G. Shashmurin, A.S. Frants, T.V. Vinogradova. J. Anal. Chem., 74 (12), 1256 (2019)
- D.A. Caselli, C.Z. Ning. Opt. Express, 19 (S4), A686 (2011)
- G.L. Tan, L. Liu, W. Wu. AIP Adv., 4, 067107 (2014)
- K.E. Suryavanshi, R.B. Dhake, A.M. Patil, M.R. Sonawane. Optik, 218, 165008 (2020)
- R.K. Dutta. Nat. Sci., 9 (1), 21 (2020)
- L.N. Maskaeva, E.V. Mostovshchikova, I.V. Vaganova, V.F. Markov, V.I. Voronin, A.D. Kutyavina, E.G. Vovkotrub. Thin Sol. Films, 718, 138468 (2020)
- V.F. Markov, L.N. Maskaeva, P.N. Ivanov. Gidrokhimicheskoe osazhdenie plenok sul'fidov metallov: modelirovanie, eksperiment (Ekaterinburg, Ural. Otd. Ross. Akad. Nauk, 2006) (in Russian)
- S. Rajathi, K. Kirubavathi, K. Selvaraju. J. Taibah Univ. for Sci., 11 (6), 1296 (2017)
- S.R. Deo, A.K. Singh, L. Deshmukh, L.J. Paliwal, R.S. Singh. Optik, 126 (20), 2311 (2015)
- M.A. Barote, S.S. Kamble, L.P. Deshmukh, E.U. Masumdar.Ceram. Int., 39 (2), 1463 (2013)
- S.M. Ho. Int. J. Thin. Films Sci. Techn., 10 (1), 45 (2021)
- A. Mohammed, Ali M. Mousa, J.P. Ponpon. J. Semicond. Technol. Sci., 9 (2), 117 (2009)
- H.M. Rietveld. J. Appl. Crystallogr., 2 (2), 65 (1969)
- D.L. Bush, J.E. Post. Rev. in Min., 20, 369 (1990)
- J. Rodriges-Carvajal. Physica B, 192 (1-2), 55 (1993)
- G.K. Williamson, W.H. Hall. Acta Metall., 1 (1), 22 (1953)
- L.E. Shelimova, V.N. Tomashik, V.I. Grytsiv. Diagrammy sostoyaniya v poluprovodnikovom materialovedenii (sistemy na osnove khal'kogenidov Si, Ge, Sn, Pb) (M., Nauka, 1991), Chap. 9, p. 256 (in Russian)
- L.N. Maskaeva, E.V. Mostovshchikova, V.F. Markov, V.I. Voronin, A.V. Pozdin, I.O. Selyanin, A.I. Mikhailova. Semiconductors, 56 (2), 91 (2022)
- V.F. Markov, L.H. Maskaeva, Yu.S. Polikarpova, M.P. Mironov, V.N. Rodin, L.S. Solov'ev, B.V. Berg, V.N. Potapov. RF Patent 2305830 (in Russian). Application 2006115277/28 dated May 3, 2006, publ. September 10, 2007.
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.