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MIS transistor based on PbSnTe : In film with an Al2O3 gate dielectric*
Russian version
DOI: 10.21883/SC.2022.02.53273.30
Klimov A. E. 1,2, Golyashov V. A.1,3, Gorshkon D. V.1, Matyushenko E. V.1, Neizvestny I. G.1,2, Sidorov G. Yu.1, Paschin N. S.1, Suprun S. P.1, Tereshchenko O. E.1,3
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State Technical University, Novosibirsk, Russia
3Novosibirsk State University, Novosibirsk, Russia
Email: klimov@isp.nsc.ru
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Results on the creation and properties of transistor-type MIS structures (MIST) with an Al2O3 thin-film gate dielectric based on PbSnTe : In films obtained by molecular beam epitaxy are presented. The source-drain current-voltage characteristics (CVC) and gate-controlled characteristics of the MIST at [BT=4.2 K have been investigated. It is shown that in MIST based on PbSnTe : In films with n~1017 cm-3 the modulation of the channel current reaches 7-8% in the range of gate voltages -10 V<Ugate<+10 V. The features of the source-drain CVC and the gate-controlled characteristics for a pulsed and sawtooth variation of Ugate are considered. Keywords: solid solution PbSnTe : In, field effect, MIS structure, Al2O3.
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