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Investigation of van der Waals crystals of GaSe and GaSxSe1-x by photoreflectance method
Russian version
DOI: 10.21883/SC.2022.04.53236.9778
Khakhulin S. A.1, Kokh K. A.2,3, Komkov O. S. 1
1St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
2Sobolev Institute of Geology and Mineralogy, Siberian Branch Russian Academy of Sciences, Novosibirsk, Russia
3Kemerovo State University, Kemerovo, Russia
Email: khsmn@ya.ru, okomkov@yahoo.com
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Photoreflectance spectra of layered undoped GaSe and GaSxSe1-x crystals present Franz-Keldysh oscillations indicating the near-surface built-in electric field, that can participate in the separation of photoinduced charge carriers in ultrahigh-sensitive photodetectors based on these materials. The measured value of the field strength in GaSxSe1-x turned out to be almost 1.5 times less than in GaSe, that may indicate a smaller number of free charge carriers in the solid solution. The broadening parameter of GaSxSe1-x spectral lines is also significantly lower than in the case of GaSe. This is due to the fact that isovalent atoms, being added into the GaSe, fill Ga vacancies, reducing the number of defects and the concentration of intrinsic charge carriers. The high-field modulation mode observed in the photoreflectance spectrum of GaSxSe1-x doped with an Al donor impurity indicates a relatively small thickness of the depletion region due to the presence of a large number of free electrons. Keywords: photoreflectance, Franz-Keldysh oscillations, GaSe, gallium monoselenide, van der Waals crystals, layered crystals.
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