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Current Transfer in a Semiconductor Structure with a Porous Silicon Film formed by Metal-Stimulated Etching
Melnik N. N.
1, Tregulov V. V.
2, Litvinov V. G.
3, Ermachikhin A. V.
3, Trusov E. P.
3, Skoptsova G. N.
2, Ivanov A. I.2
1Lebedev Physical Institute, Russian Academy of Sciences, Moscow, Russia
2Ryazan State University named for S. Yesenin, Ryazan, Russia
3Ryazan State Radio Engineering University, Ryazan, Russia
2Ryazan State University named for S. Yesenin, Ryazan, Russia
3Ryazan State Radio Engineering University, Ryazan, Russia
Email: al.erm@mail.ru
It is shown that during a porous Si film formation by metal-stimulated etching a barrier layer is formed on a monocrystal p-Si substrate. The rectifying properties of the semiconductor structure can be explained by the fixation of the Fermi level in the near-surface layer of porous Si due to a high concentration of electrically active defects (deep centers or traps). It causes to energy bands bending and the appearance of a potential barrier. The study of Raman scattering showed the absence of size effects and a change in the band gap in the porous Si film. Activation energies of deep centers by the temperature dependence of the current-voltage characteristics and deep level transient spectroscopy study were determined. Keywords: porous silicon, deep level, Raman scattering, current-voltage characteristics, deep level transient spectroscopy.
- T. Dzhafarov, A. Bayramov. In: Handbook of Porous Silicon, ed. by L. Canham (Springer International Publishing AG, part of Springer Nature, 2018) p. 1479
- X. Liu, P.R. Coxon, M. Peters, B. Hoex, J.M. Cole, D.J. Fray. Energy Environ. Sci., 7, 3223 (2014)
- M. Karanam, G.M. Rao, S. Habibuddin, R. Padmasuvarna. Int. Lett. Chem., Phys. Astron., 71, 40 (2016)
- K.W. Kolasinski. In: Porous Silicon: From Formation to Application. Formation and Properties, ed. by G. Korotcenkov (London--N.Y., Taylor and Francis Group, LLC, 2016) v. 1, p. 291
- Yu.A. Zharova V.A. Tolmachev, S.I. Pavlov. Semiconductors, 53, 566 (2019)
- H. Han, Z. Huang, W. Lee. Nano Today, 9 (3), 271 (2014)
- H.V. Bandarenka. In: Handbook of Porous Silicon, ed. by L. Canham (Springer International Publishing AG, part of Springer Nature, 2018) p. 1315
- Y. Zhao, Z. Liu, C. Liang, M. Yu. Maximov, B. Liu, J. Wang, F. Yin. Int. J. Electrochem. Sci., 12, 8591 (2017)
- A.V. Ermachikhin, V.G. Litvinov. Instrum. Exp. Tech., 61 (2), 277 (2018)
- M. Yang, D. Huang, P. Hao. J. Appl. Phys., 75 (1), 651 (1994)
- M. Ivanda. In: Handbook of Porous Silicon, ed. by L. Canham (Springer International Publishing AG, part of Springer Nature, 2018) p. 611
- G. Amato. In: Porous Silicon: From Formation to Application. Formation and Properties, ed. by G. Korotcenkov (London--N.Y., Taylor and Francis Group, LLC, 2016) v. 1, p. 156
- Qiu Li, Wei Qiu, Haoyun Tan, Jiangang Guo, Yilan Kang. Opt. Lasers Eng., 48 (11), 1119 (2010)
- S.M. Sze. Physics of Semiconductor Devices (John Wiley and Sons Ltd; 2nd edition, 1981)
- M. Lampert, P. Mark. Inzhekcionnye toki v tverdyh telah (M., Mir, 1973) (in Russian)
- B.L. Sharma, R.K. Purohit. Poluprovodnikovye geteroperekhody (M., Sov. padio, 1979) (in Russian)
- A.A. Evtukh, E.B. Kaganovich, E.G. Manovilov, N.A. Semenenko. Semiconductors, 40, 175 (2006)
- V.V. Pasynkov, L.K. Chirkin. Poluprovodnikovye pribory (M., Vyssh. shk., 1987) (Russian)
- V.G. Litvinov, N.V. Vishnyakov, V.V. Gudzev, N.B. Rybin, D.S. Kusakin, A.V. Ermachikhin, S.M. Karabanov, S.P. Vikhrov, A.S. Karabanov, E.V. Slivkin. MRS Advances, 1 (14), 911 (2016)
- G.S. Dordzhin, V.N. Laktyushkin, M.V. Sorokina. Mater. elektron. tekhn., 7 (4), 72 (1989) (in Russian)
- K. Rejvi. Defekty i primesi v poluprovodnikovom kremnii (M., Mir, 1984) (in Russian)
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