Volumes and Issues
Home » Semiconductors » Year 2022, issue 4 » Article p. 262
<<<>>>
Luminescence features of bulk crystals β-(GaxAl1-x)2O3
Russian version
DOI: 10.21883/SC.2022.04.53230.9776
Dementeva E. V. 1, Dementev P. A.1, Korenko N. P. 1,2, Shkarupa I. I. 1,2, Kremleva A. V. 2, Panov D. Yu.2, Spiridonov V. A. 2, Zamoryanskaya M. V. 1, Bauman D. A. 2, Odnobludov M. A. 2,3, Romanov A. E. 1,2, Bugrov V. E.2
1Ioffe Institute, St. Petersburg, Russia
2ITMO University, St. Petersburg, Russia
3Peter the Great Saint-Petersburg Polytechnic University, St. Petersburg, Russia
Email: ivanova@mail.ioffe.ru
PDF
This work is devoted to the study of the luminescence inhomogeneity nature of bulk (GaxAl1-x)2O3 samples grown by the Czochralski method. In the study of sample cleavages by the local cathodoluminescence method, regions with different luminescence were observed. To determine the cathodoluminescence contrast nature, we studied the uniformity of the aluminum distribution, the surface topography, and compared the luminescence spectra and the kinetics of emission bands for different regions of the sample. Also, to determine the luminescence bands nature, the crystal was annealed in air at 1000oC. This made it possible to observe the change in luminescence for the same region of the sample. Based on the studies performed, it was concluded that inhomogeneous luminescence is associated with the distribution of point defects. Upon annealing in air, the transformation of nonradiative recombination centers into luminescent centers was observed. Keywords: gallium oxide, luminescence, point defects.
  1. S.J. Pearton, F. Ren, M. Tadjer, J. Kim. J. Appl. Phys., 124, 220901 (2018)
  2. X. Chen, F. Ren, S. Gu, J. Ye. Photonics Res., 7, 381 (2019)
  3. S.J. Pearton, J. Yang, P.H. Cary, F. Ren, J. Kim, M.J. Tadjer, M.A. Mastro. Appl. Phys. Rev., 5, 011301 (2018)
  4. J. Xu, W. Zheng, F. Huang. J. Mater. Chem. C, 7, 8753 (2019)
  5. T. Harwig, F. Kellendonk, S. Slappendel. J. Phys. Chem. Solids, 39 (6), 675 (1978)
  6. A.I. Kuznetsov, V.N. Abramov, T.V. Uibo. Opt. Spectrosc., 58, 368 (1985)
  7. L. Binet, D. Gourier. J. Phys. Chem. Solids, 59 (8), 1241 (1998)
  8. V.I. Vasil'tsiv, Ya.M. Zakharko, Ya.I. Prim. Ukr. Fiz. Zh., 33, 1320 (1988)
  9. O.M. Bordun, B.O. Bordun, I.Yo. Kukharskyy, I.I. Medvid. J. Appl. Spectrosc., 84 (1), 46 (2017)
  10. C. Liu, Y. Berencen, J. Yang, Y. Wei, M. Wang, Y. Yuan, C. Xu, Y. Xie, X. Li, S. Zhou. Semicond. Sci. Technol., 33, 095022 (2018)
  11. Q.D. Ho, T. Frauenheim, P. Deak. Phys. Rev. B, 97, 115163 (2018)
  12. T. Harwig, F. Kellendonk. J. Solid State Chem., 24, 255 (1978)
  13. W. Hua, Sh. Lia, Y. Hua, L. Wana, Sh. Jiaoc, W. Hub, D.N. Talward, Zh.Ch. Fenga, T. Lia, J. Xua, L. Weia, W. Guoe. J. Alloys Compd., 864, 158765 (2021)
  14. P.N. Butenko, D.I. Panov, A.V. Kremleva, D.A. Zakgeim, A.V. Nashchekin, I.G. Smirnova, D.A. Bauman, A.E. Romanov, V.E. Bougrov. Mater. Phys. Mechanics, 42, 802 (2019)
  15. D.A. Zakgeym, D.Yu. Panov, V.A. Spiridonov, A.V. Kremleva, A.M. Smirnov, D.A. Bauman, A.E. Romanov, M.A. Odnoblyudov, V.E. Bugrov. Pisma ZhTF, 46 (22), 43 (2020) (in Russian)
  16. M.V. Zamoryanskaya, S.G. Konnikov, A.N. Zamoryanskii. Instrum. Exper. Techn., 47 (4), 477 (2004)
  17. E.V. Ivanova, P.A. Dementev, M.V. Zamoryanskaya, D.A. Zakgeym, D.Yu. Panov, V.A. Spiridonov, A.V. Kremleva, M.A. Odnoblyudov, D.A. Bauman, A.E. Romanov, V.E. Bugrov. FTT, 63, 4 (421) (in Russian)

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru