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Magnetotransport characterization of THz detectors based on plasma oscillations in submicron field effect transistors

Lusakowski J.^1,2, Knap W.^1,3, Dyakonova N.¹, Kaminska E.⁴, Piotrowska A.⁴, Golaszewska K.⁴, Shur M.S.³, Smirnov D.⁵, Gavrilenko V.⁶, Antonov A.⁶, Morozov S.⁶

¹GES--UMR, CNRS--Universite Montpellier 2, Montpellier, France
²Institute of Experimental Physics, University of Warsaw, 00-681 Warsaw, Poland
³Rensselaer Polytechnic Institute, Troy, N.Y., USA
⁴Institute of Electron Technology, 02-668 Warsaw, Poland
⁵Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia Ioffe Institute, St. Petersburg, Russia

⁶Institute for Physics of Microstructures of RAS, Nizhny Novgorod, Russia

Institute for Physics of Microstructures RAS, Nizhny Novgorod, Russia

Email: gavr@ipm.sci-nnov.ru

Выставление онлайн: 20 декабря 2003 г.

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Magnetotransport characterization of field effect transistors in view of their application as resonant detectors of THz radiation is presented. Three groups of different transistors based on GaAs/GaAlAs or GaInAs/AlGaAs heterostructures in investigated at liquid helium temperatures and for magnetic field up to 14 T. The magnetic field dependence of the transistor's resistance is used for evaluation of the electron density and mobility in the transistor's channel. The electron mobility and concentration determined from magnetotransport measurements are used for the interpretation of recently observed resonant detection of terahertz radiation in 0.15 mum gate length GaAs transistors and for the determination of the parameters of other field effect transistors processed for resonant and voltage tuneable detection of THz radiation. A financial support by NATO linkage grant CLG977520 - "Semiconductor Sources for Terahertz Generation" is highly acknoledged. The work at RPI was supported by the national Science Foundation (Program Monitor Dr. James Mink).

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