Gavrilov K. A. 1, Evstropov V. V. 1, Kalyuzhnyy N.A.1, Mintairov M. A. 1, Mintairov S. A. 1, Nadtochiy A. M. 2, Nakhimovich M.V.1, Pirogov E. V. 2, Salii R.A.1, Schwarts M. Z. 1
1Ioffe Institute, St. Petersburg, Russia
2Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
Email: mintairov@scell.ioffe.ru
InAsP and GaInAsP layers were grown on InP substrates using the metal-organic vapor-phase epitaxy method. The studies conducted using the photoluminescence, X-ray diffractometry, and energy-dispersive X-ray spectroscopy methods allowed us to determine the conditions for growing Ga0.26In0.74As0.5P0.5 layers with Δ a/a=2000 ppm and a band gap of 1.04 eV (absorption edge 1190 nm). Based on these layers, a laser radiation photoconverter structure for λ=1064 nm was grown. The measurements and calculations made it possible to predict the efficiency of such a structure at a level of 40 % at a laser radiation incident power density of λ=1064 nm up to 30-50 W/cm2. Keywords: laser photoconverter, MOVPE, spectral characteristics, mathematical modeling.
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