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Influence of the morphology of InP substrates on interface roughness and defect density of quantum-cascade laser heterostructures
Papylev D. S.
1, Novikov I. I.
1,2, Andryushkin V. V.
1,2, Gladyshev А. G.
2, Dudelev V. V.
3, Karachinsky L. Ya.
1,2, Babichev A. V.
1, Nyapshaev I. A.
3, Egorov A. Yu.
2,3, Sokolovskii G. S
3
1ITMO University, St. Petersburg, Russia
2Connector Optics LLC, St. Petersburg, Russia
3Ioffe Institute, St. Petersburg, Russia
2Connector Optics LLC, St. Petersburg, Russia
3Ioffe Institute, St. Petersburg, Russia
Email: dspapylev@itmo.ru
The influence of InP substrate of different manufactures on the structural properties of quantum-cascade laser heterostructures produced by molecular-beam epitaxy on metalorganic chemical vapor deposition templates was studied. A reduction in the root mean square interface roughness by 42-47 % as well as a decrease in surface defect density by a factor of 1.5-4.0 were demonstrated by using one type of substrate despite equal nominal substrate characteristics. The results confirm the critical importance the initial substrate quality in reducing the density of point defects and the roughness of the interfaces of quantum cascade lasers heterostructures. Keywords: Quantum-cascade laser, interface roughness, defects, X-ray reflectometry, heterostructure.
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