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Temperature Dependence of Exciton and Free Carrier Contributions to the Luminescence of CdTe/CdMgTe Heterostructure
Agekyan V.F.1, Verbin S. Yu.
1, Serov A. Yu.
1, Filosofov N.G.
1, Shtrom I.V.
1,2
1St. Petersburg State University, St. Petersburg, Russia
2Institute for Analytical Instrumentation of the Russian Academy of Sciences, Saint Petersburg, Russia
2Institute for Analytical Instrumentation of the Russian Academy of Sciences, Saint Petersburg, Russia
Email: v.agekyan@spbu.ru, s.verbin@spbu.ru, a.serov@spbu.ru, n.filosofov@spbu.ru, i.shtorm@spbu.ru
The luminescence spectra and luminescence excitation spectra under the above-barrier excitation of the CdTe/Cd0.6Mg0.4Te heterostructure with a single quantum well were studied at temperatures of 5-100 K. The luminescence at the maximum of the barrier band is determined by the relaxation of the hot excitons over the entire temperature range, whereas free carriers make the main contribution to the luminescence of the low-energy side of the barrier band and the luminescence of the quantum well at low temperatures. Keywords: quantum well II-VI, cadmium telluride, luminescence, energy transfer.
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