Volumes and Issues
Home » Semiconductors » Year 2025, issue 5 » Article p. 287
<<<
Spectral and spatial emission characteristics of edge-emitting InGaAs/GaAs quantum well laser diodes featuring an ultra-broad optical waveguide
Russian version
Beckman A. A.1, Melnichenko I. A. 2,3, Shernyakov Yu. M. 1, Kornyshov G. O. 1, Gordeev N.Yu. 1, Payusov A.S. 1, Simchuk O.I. 2, Tkach Yu.S. 2, Maximov M.V. 2
1Ioffe Institute, St. Petersburg, Russia
2Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
3HSE University, St. Petersburg, Russia
Email: spbgate21@gmail.com, imelnichenko@hse.ru, Yuri.Shernyakov@mail.ioffe.ru, gk@mail.ioffe.ru, gordeev@switch.ioffe.ru, plusov@mail.ioffe.ru, osmailbox@yahoo.com, polubavkina@mail.ru, maximov@beam.ioffe.ru
PDF
The laser emission spectra, far-field patterns, and near-field emission intensity distributions of InGaAs/GaAs/AlGaAs edge-emitting quantum well laser diodes with ultra-broad optical waveguide were studied as functions of the pump current and temperature. It was shown that lasing from the ground state occurs on the second-order mode and from the excited state on the fundamental mode. Keywords: semiconductor laser diodes, vertical waveguide modes, fundamental mode, high-power laser diodes.
  1. S. Slipchenko, I. Shashkin, D. Nikolayev, V. Shamakhov, A. Podoskin, O. Soboleva, K. Bakhvalov, V. Kriychkov, N. Pikhtin, P. Kop'ev. Optics Lett., 48 (2), 203 (2023). DOI: 10.1364/OL.476248
  2. N. Ammouri, H. Christopher, A. Maab dorf, J. Fricke, A. Ginolas, A. Liero, H. Wenzel, A. Knigge, G. Trankle. Optics Lett., 48 (24), 6520 (2023). DOI: 10.1364/OL.510521
  3. A. Kozlowska, A. Malag. Proc. SPIE, 5120, 178 (2003). DOI: 10.1117/12.515429
  4. A.V. Ankudinov, M.L. Yanul, S.O. Slipchenko, A.V. Shelaev, P.S. Dorozhkin, A.A. Podoskin, I.S. Tarasov. Opt. Express, 22 (21), 26438 (2014). DOI: 10.1364/OE.22.026438
  5. S. Peled. Appl. Optics, 19 (2), 324 (1980). DOI: 10.1364/ao.19.000324
  6. A.E. Zhukov, A.R. Kovsh, D.A. Livshits, V.M. Ustinov, Z.I. Alferov. Semicond. Sci. Technol., 18 (8), 774 (2003). DOI: 10.1088/0268-1242/18/8/310
  7. M.V. Maximov, Yu.M. Shernyakov, G.O. Kornyshov, A.A. Beckman, F.I. Zubov, A.A. Kharchenko, A.S. Payusov, S.A. Mintairov, N.A. Kalyuzhnyy, V.G. Dubrovskii, N.Yu. Gordeev. Optics Lett., 49 (21), 6213 (2024). DOI: 10.1364/OL.532606
  8. D.A. Veselov, K.R. Ayusheva, N.A. Pikhtin, A.V. Lyutetskiy, S.O. Slipchenko, I.S. Tarasov. J. Appl. Phys., 121 (16), 163101 (2017). DOI: 10.1063/1.4982160
  9. V.V. Korenev, A.V. Savelyev, M.V. Maximov, F.I. Zubov, Yu.M. Shernyakov, M.M. Kulagina, A.E. Zhukov. Appl. Phys. Lett., 111, 132103 (2017). DOI: 10.1063/1.5004268
  10. E.A. Avrutin, B.S. Ryvkin, A.S. Payusov, A.A. Serin, N.Y. Gordeev. Semicond. Sci. Technol., 30 (11), 115007 (2015). DOI: 10.1088/0268-1242/30/11/115007
  11. B.J. Stevens, D.T.D. Childs, H. Shahid, R.A. Hogg. Appl. Phys. Lett., 95 (6), 061101 (2009). DOI: 10.1063/1.3193664
  12. C. Wang, B. Lingnau, K. Ludge, J. Even, F. Grillot. IEEE J. Quant. Electron., 50 (9), 1 (2014). DOI: 10.1109/JQE.2014.2335811
  13. M.V. Maximov, Yu.M. Shernyakov, N.Yu. Gordeev, A.M. Nadtochiy, A.E. Zhukov. Tech. Phys. Lett., 49 (3), 15 (2023). DOI: 10.21883/TPL.2023.03.55675.19450

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru