Semiconductors
To authors
Volumes and Issues
- 2024
- 2023
- 2022
Optimization of switching memristor structures based on HfOx using electron beam exposure
Zalyalov T. M.
1,2, Voronkovskii V. A.
1, Gerasimova A. K.
1, Islamov D. R.
1,2
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State University, Novosibirsk, Russia
2Novosibirsk State University, Novosibirsk, Russia
Email: timz@isp.nsc.ru, voronkovskii@isp.nsc.ru, gerasimova@isp.nsc.ru, damir@isp.nsc.ru
The electrophysical properties of memristors based on HfOx (x~1.8) irradiated with an electron beam in an area comparable in size to the cross-section of the filament are investigated. These properties are compared with memristors of a similar structure made without the use of local electron beam influence on the hafnium oxide layer. It is shown that such an effect leads to a decrease in the amplitude and voltage variance of switching states of the memristor. Charge transport in both types of memristors has been studied, and the nature of the observed differences is discussed. Keywords: hafnium oxide, memristor, electron beam, scanning electron microscope, space-charge limited current.
- Q. Liu, J. Sun, H. Lv, Sh. Long, K. Yin, N. Wan, Y. Li, L. Sun, M. Liu. Adv. Mater., 24 (14), 1844 (2012)
- F. Miao, J.P. Strachan, J.J. Yang, M.-X. Zhang, I. Goldfarb, A.C. Torrezan, P. Eschbach, R.D. Kelley, G. Medeiros-Ribeiro, R.S. Williams. Adv. Mater., 23 (47), 5633 (2011)
- V. Ravi, S. Singh, S. Sofana Reka. Trans. Emerging Telecom. Techn., 32 (1), e4143 (2021)
- L. Michalas, S. Stathopoulos, A. Khiat, T. Prodromakis. Appl. Phys. Lett., 113 (14), 143503 (2018)
- E. Wu, T. Ando, Y. Kim, R. Muralidhar, E. Cartier, P. Jamison, M. Wang, V. Narayanan. Appl. Phys. Lett., 116 (8), 082901 (2020)
- V.A. Voronkovskii, A.K. Gerasimova, V.Sh. Aliev. Pis'ma v ZhETF, 117 (7), 550 (2023). (in Russian)
- V.A. Voronkovskii, V.S. Aliev, A.K. Gerasimova, D.R. Islamov. Mater. Res. Express, 5 (1), 016402 (2018)
- V.A. Voronkovskii, V.S. Aliev, A.K. Gerasimova, D.R. Islamov. Mater. Res. Express, 6 (7), 076411 (2019)
- H.-L. Hwang, Y.-K. Chiou, C.-H. Chang, C.-C. Wang, K.-Y. Lee, T.-B. Wu, R. Kwo, M. Hong, K.-S. Chang-Liao, C.-Y. Lu, C.-C. Lu, F.-C. Chiu, C.-H. Chen,J. Y.-M. Lee, A. Chin. Appl. Surf. Sci., 254 (1), 236 (2007)
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.