Karlina L.B.1, Vlasov A.S.1, Ilkiv I.V.2, Vershinin A.V.2, Soshnikov I.P.1,2,3
1Ioffe Institute, St. Petersburg, Russia
2Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
3Institute for Analytical Instrumentation of the Russian Academy of Sciences, Saint Petersburg, Russia
Email: karlin@mail.ioffe.ru
The possibility of InP nanowhiskers growth from the saturated phosphorus and indium vapors with V/III ratio of 8-10 in a quasi-closed volume on (111) oriented silicon substrates with a natural oxide layer 2-2.5 nm has been demonstrated. The growth of InP nanowhiskers from Au-In-P catalytic droplets formed during the initial period is reported. Optical studies confirmed the formation of InP nanostructures upon the Si surface. The nanostructures exhibit a high doping level presumably with tin atoms. Keywords: InP nanowires, growth from vapor phase, III-V on Si.
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Дата начала обработки статистических данных - 27 января 2016 г.