Semiconductors
To authors
Volumes and Issues
- 2024
- 2023
- 2022
Influence of single radiation defect cluster formation on transistor memory cell switching
Zabavichev I. Yu.
1,2, Puzanov A. S.
1,2, Obolensky S. V.
1,2
1Lobachevsky State University, Nizhny Novgorod, Russia
2Federal State Unitary Enterprise "Russian Federal Nuclear Center - All-Russian Research Institute of Experimental Physics", Sarov, Nizhny Novgorod Region, Russia
2Federal State Unitary Enterprise "Russian Federal Nuclear Center - All-Russian Research Institute of Experimental Physics", Sarov, Nizhny Novgorod Region, Russia
Email: zabavichev.rf@gmail.com
The effect of a single radiation defects cluster formation on the transistor memory cell switching was studied. Estimates of the nuclear particle energy, capable of forming a cluster of radiation defects, causing a soft error of modern silicon transistors with various channel sizes. The failure cross sections for six and eight-element transistor memory cells are calculated for various technological processes under the influence of a neutron flux. Keywords: transistor memory cell, radiation defect cluster, single event upset. DOI: 10.61011/SC.2023.04.56424.15k
- S.W. Chang, P.W. Chou, W.C. Wu. IEEE J. Solid-State Circuits, 46 (2), 520 (2011)
- K.O. Petrosyants, I.A. Kharitonov, E.V. Orekhov, L.M. Samburskii, A.P. Yatmanov, A.V. Voevodin. Sbornik trudov 5-i Vserossiiskoi nauchno-tekhnicheskoi konferentsii "Problemy razrabotki perspektivnykh mikro- i nanoelektronnykh sistem --- 2012" (M., 2012). (in Russian)
- P.E. Dodd, M.R. Shaneyfelt, J.R. Schwank, J.A. Felix. IEEE Trans. Nucl. Sci., 57 (4), 1747 (2010)
- L. Atias, A. Teman, A. Fish. Proc. 28th Convention of Electrical and Electronics Engineers in Israel, 2014, p. 1
- M. Sajid, N.G. Chechenin, F.S. Torres, U.A. Gulzari, M.U. Butt, Z. Ming, E.U. Khan. / Microelectron. Reliab., 78, 11 (2017)
- J. Yuan, Y. Zhao, L. Wang, T.Li, C. Sui. J. Phys.: Conf. Ser., 1920, 012069 (2021)
- T. Copetti, G.C. Medeiros, M. Taouil, S. Hamdioui, L.B. Poehis, T.R. Balen. J. Electron. Testing, 37, 383 (2021)
- J.F. Ziegler, W.A. Lanford. Science, 206, 776 (1979)
- C.S. Guenzer, E.A. Wolicki, R.G. Allas. IEEE Trans. Nucl. Sci., 26 (6), 5048 (1979)
- A.S. Puzanov, S.V. Obolenskiy, M.M. Venediktov, V.A. Kozlov. Semiconductors, 53 (9), 1222 (2019)
- I.Yu. Zabavichev, A.S. Puzanov, S.V. Obolenskiy. Semiconductors, 56 (7), 464 (2022)
- L. Chang, D.M. Fried, J. Hergenrother, J.W. Sleight, R.H. Dennard, R.K. Montoye, L. Sekaric, S.J. McNab, A.W. Topol, C.D. Adams. Proc. Symp. on VLSI Technology, 2005, p. 128
- M. Ansari, H. Afzali-Kusha, B. Ebrahimi, Z. Navabi, A. A.-Kusha, M. Pedram. Integration, the VLSI J., 50, 91 (2015)
- E.A. Kramer-Ageev. Eksperimental'nye metody neitronnykh issledovanii (M., Energoizdat, 1990). (in Russian)
- S.V. Obolenskii, E.V. Volkova, A.B. Loginov, B.A. Loginov, E.A. Tarasova, A.S. Puzanov, S.A. Korolev. Tech. Phys. Lett., 47 (3), 248 (2021)
- A.S. Davydov. Teoriya tverdogo tela (M., Nauka, 1976). (in Russian)
- I.Yu. Zabavichev, A.A. Potekhin, A.S. Puzanov, S.V. Obolenskiy, V.A. Kozlov. Semiconductors, 51 (11), 1466 (2017)
- V.L. Vinetskii, G.A. Kholodar'. Radiatsionnaya fizika poluprovodnikov (Kiev, Nauk. Dumka, 1979). (in Russian)
- I.Yu. Zabavichev. Sbornik trudov XXVI nauchnoi konferentsii po radiofizike (N. Novgorod, NNGU, 2021). (in Russian)
- S. Plimton. J. Comput. Phys., 117, 1 (1995)
- D. Duffy, A. Rutherford. J. Phys.: Condens. Matter, 19, 016207 (2007)
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.