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- 2022
Influence of single radiation defect cluster formation on transistor memory cell switching
Zabavichev I. Yu.
1,2, Puzanov A. S.
1,2, Obolensky S. V.
1,2
1Lobachevsky State University, Nizhny Novgorod, Russia
2Federal State Unitary Enterprise "Russian Federal Nuclear Center - All-Russian Research Institute of Experimental Physics", Sarov, Nizhny Novgorod Region, Russia
2Federal State Unitary Enterprise "Russian Federal Nuclear Center - All-Russian Research Institute of Experimental Physics", Sarov, Nizhny Novgorod Region, Russia
Email: zabavichev.rf@gmail.com
The effect of a single radiation defects cluster formation on the transistor memory cell switching was studied. Estimates of the nuclear particle energy, capable of forming a cluster of radiation defects, causing a soft error of modern silicon transistors with various channel sizes. The failure cross sections for six and eight-element transistor memory cells are calculated for various technological processes under the influence of a neutron flux. Keywords: transistor memory cell, radiation defect cluster, single event upset. DOI: 10.61011/SC.2023.04.56424.15k
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