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- 2022
Radiation hardness of bipolar transistor based integrated circuits improved by ECR hydrogen plasma treatment and Si-wafers gettering
We demonstrate significant improvement of the radiation immunity of the integrated circuits based on silicon bipolar transistors. Strong decrease of the current gain degradation and significant yield improvement after high-energy gamma irradiation are both shown. This was achieved by development of efficient hydrogenation process for the silicon bulk and the surface dielectric layer using electron cyclotron resonance (ECR) plasma, as well as implementation of effective Si-wafer gettering option. Keywords: integrated circuits, bipolar transistors, ECR-plasma, hydrogenation of semiconductor structures, trap state passivation, gettering of semiconductor wafers, γ-irradiation, radiation hardness, yield of workable transistors.
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