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Light and heavy excitons in strained CdTe/CdZnTe quantum wells
Kotova L. V.
1,2, Belova D. D. 1, Andre R.
3, Mariette H.3,4, Kochereshko V. P.
1
1Ioffe Institute, St. Petersburg, Russia
2 ITMO University, St. Petersburg, Russia
3Institut Neel CNRS, Grenoble, France
4Japanese-French laboratory for Semiconductor Physics and Technology J-F AST, CNRS, Universite Grenoble Alpes, University of Tsukuba, Japan
2 ITMO University, St. Petersburg, Russia
3Institut Neel CNRS, Grenoble, France
4Japanese-French laboratory for Semiconductor Physics and Technology J-F AST, CNRS, Universite Grenoble Alpes, University of Tsukuba, Japan
Email: kotova@mail.ioffe.ru, Vladimir.Kochereshko@mail.ioffe.ru
The spectra of photoluminescence and polarized reflection under normal and oblique incidence of light from structures with quantum wells with symmetric Cd0.9Zn0.1Te/CdTe/Cd0.9Zn0.1Te and asymmetric Cd0.9Zn0.1Te/CdTe/Cd0.4Mg0.6Te barriers have been studied. Due to the mechanical stresses caused by the mismatch of the crystal lattices of the wells and barriers, the energy of light holes in quantum wells was higher than in barriers, i.e., the band structure for them was of type II. However, in the reflection spectra, the lines of heavy and light excitons had comparable intensities. In structures with symmetric barriers, exciton resonances, which do not appear in the photoluminescence spectra, were found in the reflection spectra. A detailed calculation of the energy levels and reflection spectra has been carried out Keywords: quantum well, reflection, excitons, strain.
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