Semiconductors
To authors
Volumes and Issues
- 2023
- 2022
Structure and optical properties of a composite AsSb-Al0.6Ga0.4As0.97Sb0.03 metamaterial
Epitaxial layers of AlxGa1-xAs1-ySby with an aluminum content x~60% and antimony content y~3% were successfully grown by molecular-beam epitaxy at low temperature. A developed system of AsSb nanoinclusions was formed in the semiconductor matrix by subsequent annealing. The extended transparency window of the obtained metamaterial allows us to document the absorption of light near the interband absorption edge of the AlxGa1-xAs1-ySby semiconductor matrix. Parameters of the observed extinction band allow us to attribute the optical absorption to the plasmon resonance in the system of AsSb nanoinclusions. Keywords: molecular beam epitaxy, x-ray diffraction analysis, transmission electron microscopy, optical properties, plasmon resonance.
- S.A. Maier. Plasmonics: Fundamentals and Applications (N. Y., Springer, 2007)
- D. Zhao, Y. Liu, J. Qiu, X. Liu. Adv. Photonics Res., 2, 2100003 (2021)
- N.A. Toropov, I.A. Gladskikh, P.V. Gladskikh, A.N. Kosarev, V.V. Preobrazhenskii, M.A. Putyato, B.R. Semyagin, V.V. Chaldyshev, T.A. Vartanyan. J. Opt. Technol., 84, 459 (2017)
- A.N. Kosarev, V.V. Chaldyshev, A.A. Kondikov, T.A. Vartanyan, N.A. Toropov, I.A. Gladskikh, P.V. Gladskikh, I. Akimov, M. Bayer, V.V. Preobrazhensky, M.A. Putyato, B.R. Semyagin. Opt. Spectrosc., 126, 492 (2019)
- M.R. Melloch, J.M. Woodall, E.S. Harmon, N. Otsuka, F.H. Pollak, D.D. Nolte, R.M. Feenstra, M.A. Lutz. Ann. Rev. Mater. Sci., 25, 547 (1995)
- N.A. Bert, A.I. Veinger, M.D. Vilisova, S.I. Goloshchapov, I.V. Ivonin, S.V. Kozyrev, A.E. Kunitsyn, L.G. Lavrent'eva, D.I. Lubyshev, V.V. Preobrazhenskii, B.R. Semyagin, V.V. Tret'yakov, V.V. Chaldyshev, M.P. Yakubenya. Phys. Solid State, 35, 1289 (1993)
- X. Liu, A. Prasad, J. Nishio, E.R. Weber, Z. Liliental-Weber, W. Walukiewicz. Appl. Phys. Lett., 67, 279 (1995)
- L.G. Lavrent'eva, M.D. Vilisova, V.V. Preobrazhenskii, V.V. Chaldyshev. Crystallogr. Rep., 47, S118 (2002)
- A.C. Warren, J.M. Woodall, J.L. Freeouf, D. Grischkowsky, D.T. McInturff, M.R. Melloch, N. Otsuka. Appl. Phys. Lett., 57, 1331 (1990)
- D.D. Nolte. J. Appl. Phys., 76, 3740 (1994)
- N.A. Bert, V.V. Chaldyshev, N.A. Cherkashin, V.N. Nevedomskii, V.V. Preobrazhenskii, M.A. Putyato, B.R. Semyagin, V.I. Ushanov, M.A. Yagovkina. J. Appl. Phys., 125, 145106 (2019)
- P.V. Lukin, V.V. Chaldyshev, V.V. Preobrazhensky, M.A. Putyato, B.R. Semyagin. Semiconductors, 46, 1291 (2012)
- V.I. Ushanov, V.V. Chaldyshev, N.D. Ilyinskaya, N.M. Lebedeva, M.A. Yagovkina, V.V. Preobrazhensky, M.A. Putyato, B.R. Semyagin. Phys. Solid State, 56, 1952 (2014)
- V.I. Ushanov, V.V. Chaldyshev, N.A. Bert, V.N. Unknown, N.D. Ilyinskaya, N.M. Lebedeva, V.V. Preobrazhensky, M.A. Putyato, B.R. Semyagin. Semiconductors, 49, 1587 (2015)
- M.N. Chang, K.C. Hsieh, T.-E. Nee, J.-I. Chyi. J. Appl. Phys., 86, 2442 (1999)
- N. Cherkashin, A. Claverie, C. Bonafos, V.V. Chaldyshev, N.A. Bert, V.V. Preobrazhenskii, M.A. Putyato, B.R. Semyagin, P. Werner. J. Appl. Phys., 102, 023520 (2007)
- N. Bert, V. Ushanov, L. Snigirev, D. Kirilenko, V. Ulin, M. Yagovkina, V. Preobrazhenskii, M. Putyato, B. Semyagin, I. Kasatkin, V. Chaldyshev. Materials, 15, 7597 (2022)
- M. Cardona, D.L. Greenaway. Phys. Rev. A, 133, 1685 (1964).
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.