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- 2022
Stimulated emission in the heavily doped Al0.68Ga0.32N : Si structures with transverse optical pumping at room temperature
Bokhan P. A.
1, Zhuravlev K. S.1, Zakrevsky D.E.1,2, Malin T. V.
1, Osinnykh I. V.
1,3, Fateev N.V.
1,3
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State Technical University, Novosibirsk, Russia
3Novosibirsk State University, Novosibirsk, Russia
2Novosibirsk State Technical University, Novosibirsk, Russia
3Novosibirsk State University, Novosibirsk, Russia
Email: bokhan@isp.nsc.ru, zhur@isp.nsc.ru, zakrdm@isp.nsc.ru, mal-tv@isp.nsc.ru, igor-osinnykh@isp.nsc.ru, fateev@isp.nsc.ru
The broadband stimulated emission in the spectral range λ=380-700 nm with the inhomogeneous broadening has been experimentally obtined in the heavily doped Al0.68Ga0.32N : Si structures grown by molecular beam epitaxy. The behavior of the intensities and spectra of stimulated emission from the edge of the active element with transverse pulsed pumping by radiation with λ=266 nm, measured at room temperature, demonstrate the threshold behavior and optical gain. For stimulated emission with a maximum at λ=500 nm, the minimum threshold pump power density was 6.5 kW/cm2 for excited region length of 1.5 mm. The parameters and contributions of the two main processes e-A and D-A of radiative recombination in the excited structures for stimulated emission and optical gain are studied. Keywords: stimulated emission, heavily doped AlxGa1-xN structures, luminescence, optical gain, donor-acceptor recombination.
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