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High efficiency (EQE=37.5%) infrared (850 nm) light-emitting diodes with Bragg and mirror reflectors
Malevskaya A. V.
1, Kalyuzhnyy N. A.
1, Mintairov S. A.
1, Salii R. A.
1, Malevskii D. A.
1, Nakhimovich M. V.1, Larionov V. R.
1, Pokrovskii P. V.
1, Shvarts M. Z.
1, Andreev V. M.
1
1Ioffe Institute, St. Petersburg, Russia
Email: amalevskaya@mail.ioffe.ru, nickk@mail.ioffe.ru, mintairov@scell.ioffe.ru, r.saliy@mail.ioffe.ru, dmalevsky@scell.ioffe.ru, NMar@mail.ioffe.ru, larionov@scell.ioffe.rssi.ru, P.pokrovskiy@mail.ioffe.ru, shvarts@scell.ioffe.ru, vmandreev@mail.ioffe.ru
Developed and investigated are IR (850 nm) light-emitting diodes based on AlGaAs/Ga(In)As heterostructures grown by the MOCVD technique with multiple quantum wells in the active region and with a double optical reflector consisted of a multilayer Al0.9Ga0.1As/Al0.1Ga0.9As Bragg heterostructure and an Ag mirror layer. Light-emitting diodes with the external quantum efficiency EQE=37.5% at current densities greater than >10 A/cm2 have been fabricated. Keywords: IR light-emitting diode, AlGaAs/GaAs heterostructure, Bragg reflector, InGaAs quantum wells.
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