Castro-Arata R. A. 1, Grabko G. I. 2, Kononov A. A. 1, Anisimova N. I. 1, Krbal M. 3, Kolobov A. V. 1,4
1Herzen State Pedagogical University of Russia, St. Petersburg, Russia
2Transbaikal State University, Chita, Russia
3University of Pardubice, Pardubice, Czech Republic
4National Institute of Advanced Industrial Science and Technology, Higashi, Tsukuba, Japan
Email: recastro@mail.ru
The results of the investigations of the polarization properties in thin layers of vitreous Ge28.5Pb14.0Fe1.0S56.5 are presented. A process of dipole-relaxation polarization was discovered, the activation energy of which turned out to be equal to Ea=(0.97±0.14) eV. It has been determined that charge transfer in the Ge28.5Pb14.0Fe1.0S56.5 hybrid system is a thermally activated process with an activation energy of Ea=(0.54±0.01) eV. The calculation results allow us to conclude that the glass-forming capacity of the (Ge28.5Pb15.0S56.5)100-xFex system decreases linearly with an increase in the proportion of metal in the glass structure. Keywords: charge carrier hopping, thin layers, hybrid chalcogenide, lone-pair electrons.
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