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The increasing of charge carriers concentration in thin bismuth films
Russian version
DOI: 10.21883/SC.2022.02.53118.19
Demidov E. V. 1, Grabov V. M. 1, Komarov V. A. 1, Suslov A. V. 1, Gerega V. A. 1, A. N. Krushelnitckii 1
1Herzen State Pedagogical University of Russia, St. Petersburg, Russia
Email: demidov_evg@mail.ru, vmgrabov@yandex.ru, va-komar@yandex.ru, a.v_suslov@mail.ru, gerega.vasilisa96@gmail.com, ak.spb.ru@gmail.com
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The reasons for increasing the charge carriers concentration in thin bismuth films are discussed. The concentration was calculated on the basis of the measured electrical and galvanomagnetic coefficients at the temperature 77 K under the two-band approximation and the assumption that the charge carriers free path in the plane of the film is isotropic. Keywords: Bismuth, thin film, charge carriers concentration, surface.
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