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Coulomb interaction controlled room temperature oscillation of tunnel current in porous Si

Afonin V.V.^1,2, Gurevich V.L.^1,2, Laiho R.¹, Pavlov A.¹, Pavlova Y.¹

¹Wihuri Physical Laboratory, University of Turku, FI Turku, Finland
²Solid State Physics Division, A.F. Ioffe Institute, St.Petersburg, Russia

Поступила в редакцию: 15 декабря 1997 г.

Выставление онлайн: 20 мая 1998 г.

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A novel phenomenon of regular oscillations is observed in I-V characteristics of porous silicon under illumination by visible light. The measurements are performed at room temperature using a scanning tunneling microscope. The heights of the oscillation peaks appear to be a linear function of the oscillation number. The experimental value of the Coulomb energy determined from the oscillation period is much smaller than k_BT. The oscillations are attributed to a Coulomb effect, i. e. to the periodic trapping of a multielectron level in a quantum well within a Si nanocrystal under the combined influence of the voltage variation at the STM tip and the Coulomb interaction among the carriers.

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