Вышедшие номера
Improvement of Photocatalytic Activity by Zn Doping in Cu2O
Полная версия: 10.1134/S1063783420100091
Goyal C.P.1,2,3, Goyal D.4, Ganesh V.4, Ramgir N.S.5, Navaneethan M.1, Hayakawa Y.3, Muthamizhchelvan C.1, Ikeda H.2,3, Ponnusamy S.1
1Functional Materials and Energy Devices Laboratory, Department of Physics and Nanotechnology, SRM IST, Kattankulathur, Tamil Nadu, 603 203 India
2Graduate School of Science and Technology, Shizuoka University, Hamamatsu, 432 Japan
3Research Institute of Electronics, Shizuoka University, Hamamatsu, 432 Japan
4Department of Physics and Nanotechnology, SRM IST, Kattankulathur, 603 203 India
5Technical Physics Division, Bhabha Atomic Research Center, Mumbai, 400 085 India
Email: suruponnus@gmail.com
Поступила в редакцию: 1 мая 2020 г.
Выставление онлайн: 1 июля 2020 г.

Degradation of organic pollutants got more attention for detoxification of water. In this paper, pure and Zn-doped Cu2O particles were successfully synthesized by water bath co-precipitation method. X-ray diffraction (XRD) study confirmed the cubic structure of Cu2O. Zn doping resulted in reduction in crystallite size without changing d-spacing and crystal structure. Zn doping converts perfect cube to distorted sphere with enhanced surface area that is effective for photocatalytic applications. Elemental study confirmed the uniform distribution of Cu, Zn, and O atoms in the sample. X-ray photoelectron spectra (XPS) analysis showed peak shift in the electronic states of O with higher oxygen vacancy defects. Band gap of Cu2O after Zn doping increased from 1.84 eV to 1.91 eV. The photocatalytic activity towards methylene blue (MB) dye photo- degradation under visible light reached 96% in 120 min after Zn doping compared to 95% in 180 min for pure Cu2O. The improvement in photocatalytic degradation after Zn doping was achieved by the slow electron-hole recombination, band gap increases, oxygen vacancy defects, and higher surface area. Keywords: photocatalytic activity, Cu2O, Zn doping, methylene blue, oxygen vacancy defects.

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