Вышедшие номера
A Systematic Methodology for the Analysis of Multicomponent Photoreflectance Spectra Applied to GaAsBi|GaAs Structure
Полная версия: 10.1134/S1063783420060086
Guizani I.1, Fitouri H.2, Zaied I.3, Rebey A.2,4
1Physics Department, Faculty of Sciences and Arts in Qurayyat, Jouf University, Jouf, Saudi Arabia
2Faculty of Sciences, Unite de Recherche sur les Hetero-Epitaxies et Applications, University of Monastir, Monastir, Tunisia
3Department of Physics Faculty of Science Albaha University, Saudi Arabia
4Department of Physics, College of Science, Qassim University, PO Box, Buraidah, Qassim, Saudi Arabia
Email: iguizani@ju.edu.sa
Поступила в редакцию: 28 октября 2019 г.
Выставление онлайн: 25 марта 2020 г.

The multicomponent responses of photoreflectance spectrum is experimentally studied using selective phase analysis. After several experimental tests, the phase diagram of vanadium- doped GaAs|GaAs in region of fundamental energy shows only one component. On the other hand, the PR spectrum of GaAsBi|GaAs structure reveals at least two contributions relative to fundamental band-band transition and FKO for GaAs and/or GaAsBi layers. A successful separation of different components is realized by the help of adequate phase angle. We seem that the separation of contributions is useful to extract the values of the physical parameters for each region of the studied structure. We have detailed the methodology and the experimental procedure to identify each contribution. Keywords: photoreflectance, phase analysis, multicomponent, GaAsBi.

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