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Electro-diffusion phenomena in C60 thin films
Katz E.A.1, Faiman D.1,2, Tuladhar S.M.1, Shtutina S.2, Froumin N.3, Polak M.3
1Dept. of Solar Energy and Environmental Physics J. Blaustein Inst. for Desert Research, Ben-Gurion University of the Negev, Sede Boqer, Israel
2Dept. of Physics, Ben-Gurion University of the Negev, Beersheba, Israel
3Dept. of Materials, Ben-Gurion University of the Negev, Beersheba, Israel
Email: keugene@bgumail.bgu.ac.il
Выставление онлайн: 17 февраля 2002 г.

As part of our ongoing research program to produce semiconductor devices based on the C60 thin films, we report here on our first attempts at the intercalative doping of C60 thin films by diffusion of metals. Two techniques were employed: (a) chemically-induced counter electro-diffusion of Cu and I2 into a C60 matrix; (b) diffusion of Au under the action of an external electric field. This work was funded partly by the Israel Ministry of National Infrastructures. E.A.K. also thanks financial support by the Israel Ministry of Immigrant Absorption. S.M.T. wishes to thank the Albert Katz School for Desert Studies and the Bonna Terra Foundation.
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