Физика твердого тела
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Structural characterization of self-organized nanostructures
1Lawrence Berkeley National Laboratory, CA Berkeley, USA
2Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia
3Technische Universitat Berlin, Berlin, Germany
2Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia
3Technische Universitat Berlin, Berlin, Germany
Выставление онлайн: 19 апреля 1998 г.
Self-organized nano-objects fabricated in different semiconductor systems are currently in focus of scientific interest because of their unique electronic properties. Transmission electron microscopy and high resolution electron microscopy have been used to study the InAs quantum dots grown by molecular beam epitaxy (MBE) on GaAs and InP substrates. Optimal imaging conditions for visualization of quantum dots were extablished. Size, shape and stability of the equilibrium island arrays were analysed with respect to the growth conditions. Both decrease and increase of the As-pressure compared to the optimal value were shown to destroy the regular arrangement of the islands. Energy benefit due to the strain relaxation in the InAs islands is likely to be the driving force for their formation.
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