Pashkovskaya I.V. 1, Pashkovskii A.B. 1, Tereshkin E.V. 1
1JSC "RPC "Istok" named after Shokin", Fryazino, Moscow oblast, Russia
Email: solidstate10@mail.ru
An analysis of the influence of buffer layer thickness and composition on the thermal properties of AlGaN/GaN heterojunction transistors on diamond substrates was conducted. It was shown that, despite the significantly higher thermal conductivity of diamond substrates, the need to use thicker buffer layers than on silicon carbide substrates, in particular an AlGaN layer of approximately one micron thickness, can lead to virtually the same active region overheating temperatures while significantly reducing the average transistor temperature. Keywords: GaN field-effect transistor, channel temperature, diamond substrate.
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Дата начала обработки статистических данных - 27 января 2016 г.