Analysis of (Al)GaAs/Si buffer structures using photoluminescence measurements
Slipchenko S. O.1, Shamakhov V. V.1, Nikolaev D. N.1, Fomin E. V.1, Kondratov M. I.1, Pikhtin N. A.1
1Ioffe Institute, St. Petersburg, Russia
Email: serghpl@mail.ioffe.ru, Shamakhov@mail.ioffe.ru, Dim@mail.ioffe.ru, Evfomin@mail.ioffe.ru, Mikondratov@mail.ioffe.ru, Nike@hpld.ioffe.ru
AlGaAs photoluminescent structures were grown on a Si substrate by metal-organic chemical vapor deposition. It was shown that the incorporation of bulk (Al)GaAs layers and AlGaAs/GaAs superlattices into the GaAs buffer layer degrades the root-mean-square surface roughness and photoluminescence intensity compared to a GaAs buffer without such inserts. An assessment of the residual strains in the structure was also performed based on photoluminescence data. It was shown that the use of AlGaAs inserts in the GaAs buffer layer increases the residual strains in the structure. Keywords: MOCVD, buffer layers, silicon substrate, photoluminescence, residual strain.
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