Technical Physics Letters
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High temperature light emitting diamond pin diode based on nitrogen-vacancy luminescence centers
Buga S.G
1, Kornilov N. V.1, Kuznetsov M. S.1, Luparev N. V. 1, Prikhodko D. D.
1, Tarelkin S. A.
1, Drozdova T. E.1, Blank V. D.
1
1Technological Institute for Superhard and Novel Carbon Materials, Moscow, Russia
Email: buga@tisnum.ru, nvkor@bk.ru, mikuz@yandex.ru, luparev@gmail.com, dmprikhodko@gmail.com, sergey.tarelkin@gmail.com, t.shpitontseva@mail.ru, blankvlad@gmail.com
A diamond light-emitting p-i-n-diode has been fabricated from a nitrogen-doped synthetic single crystal diamond (n-type conductivity) grown at high pressure and temperature, and thin layers grown by homoepitaxial growth from the gas phase: i-layer of low-doped diamond with nitrogen-vacancy optically active centers and a highly boron-doped layer (p-type conductivity). Volt-ampere characteristics and electroluminescence spectra were studied for the first time at temperatures in the range 300-680oC. The emission spectrum at T=450oC has a maximum in the region of 590-610 nm and is similar to the electroluminescence spectra of nitrogen-vacancy centers previously observed at room temperature in diamond p-i-n-diodes with n-layers doped with phosphorus. The intensity of the emission increases in proportion to the electrical power of the diode current. Keywords: nitrogen-doped diamond, diamond pin diode, volt-ampere characteristics, electroluminescence, high temperatures.
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