Sukhanov M. A.1, Protasov D. Yu.1,2, Bakarov A. K.1, Makeeva A. A.1, Loshkarev I. D.1, Zhuravlev K. S.1
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State Technical University, Novosibirsk, Russia
Email: msukhanov@isp.nsc.ru
Structural defects and transport properties have been studied in InSb layers grown on GaAs substrates by molecular beam epitaxy. The composition of the buffer layer which ensures the lowest defect density and electron mobility of about 39 000 cm2/(V· s) at room temperature in undoped InSb layers 0.5 μm thick was determined. A Hall sensor based on n-type InSb layers with a high room-temperature sensitivity (~ 27 V/(A· T)) was created. Keywords: molecular beam epitaxy, InSb layers on GaAs, Hall sensor, heteroepitaxy.
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