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Luminescent response of photonic crystals with embedded Ge nanoislands with different hole etching depths

DOI: 10.21883/TPL.2023.05.56033.19511

Yurasov D.V. ¹, Yablonskiy A.N.¹, Shaleev M.V.¹, Shengurov D.V.¹, Rodyakina E.E.^2,3, Smagina Zh. V.², Verbus V.A.^1,4, Novikov A.V.¹

¹Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
²Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
³Novosibirsk State University, Novosibirsk, Russia
⁴National Research University Higher School of Economics, Nizhny Novgorod, Russia

Email: Inquisitor@ipmras.ru

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Abstract
References
Статистика просмотров

Two-dimensional Si-based photonic crystals with embedded Ge nanoislands were studied. In particular, dependences of the steady-state and time-resolved photoluminescence response on the depth of the air-holes which form the photonic crystal itself were investigated. It was shown that the maximum luminescence intensity was observed not for the fully-etched photonic crystals but for the intermediately etched ones. The possible origin of such a behavior is discussed. Keywords: SiGe heterostructures, Ge islands, Photonic crystals, Photoluminescence, non-radiative recombination.

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