Limiting factors for the growth rate of epitaxial III-V compound semiconductors
Dubrovskii V. G.1
1St. Petersburg State University, St. Petersburg, Russia
Email: dubrovskii@mail.ioffe.ru
Limiting factors for the growth rate of epitaxial III-V compound semiconductors are investigated. A model based on the two connected diffusion equations for the group III and V adatoms applies for planar layers and different nanostructures including III-V nanowires. An expression for the step growth rate is obtained and a physical parameter is revealed which determines an element which actually limits the growth process. Keywords: III-V compound semiconductors, surface diffusion of adatoms, desorption, step growth rate.
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