Technical Physics Letters
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Dedicated to the memory of V.D. Aleksandrov Effect of annealing in an inert atmosphere on the electrical properties of crystalline pentacene films
Yurasik G. A.
1, Kulishov A. A.
2, Givargizov M. E.2, Postnikov V. A.
2
1Photochemistry Centre of FSRC «Crystallography and Photonics» RAS, Moscow, Russia
2Shubnikov Institute of Crystallography “Crystallography and Photonics”, Russian Academy of Sciences, Moscow, Russia
2Shubnikov Institute of Crystallography “Crystallography and Photonics”, Russian Academy of Sciences, Moscow, Russia
Email: yurasik.georgy@yandex.ru, adakyla1255@gmail.com, mikgiv@mail.ru, postva@yandex.ru
The results of a study of the effect of annealing at 150^oC in an inert atmosphere (Ar + 5% H2) on the electrical properties of organic field-effect transistors based on pentacene are presented. Crystalline pentacene films with a thickness of 95±5 nm were obtained using thermal vacuum deposition. The transfer and output characteristics of field-effect transistors before and after annealing for 15 hours are investigated. It was found that as a result of heat treatment, the hole mobility in the saturation regime increased by an average of 30%, and the threshold voltage decreased approximately two times. According to the data of atomic force microscopy, annealing led to a more than twofold decrease in the surface roughness of pentacene films, as well as to a noticeable enlargement of grains, which led to a decrease in the concentration of traps for hole electric transport in the channel of the field-effect transistor. Keywords: pentacene, vacuum thermal deposition, crystalline films, organic field-effect transistors, hole mobility, annealing in an inert atmosphere.
- V.D. Alexandrov, Vysokomolekulyarnyye soyedineniya A, 20 (9), 1943 (1978) (in Russian)
- S. Kania, W. Mycielski, A. Lipinski, Thin Solid Films, 61 (2), 229 (1979). DOI: 10.1016/0040-6090(79)90465-6
- M.A. Fusella, S. Yang, K. Abbasi, H.H. Choi, Z. Yao, V. Podzorov, A. Avishai, B.P. Rand, Chem. Mater., 29 (16), 6666 (2017). DOI: 10.1021/acs.chemmater.7b01143
- Y. Jin, Z. Rang, M.I. Nathan, P.P. Ruden, C.R. Newman, C.D. Frisbie, Appl. Phys. Lett., 85 (19), 4406 (2004). DOI: 10.1063/1.1814802
- X. Shen, Y. Wang, J. Li, Y. Chen, Z. Wang, W. Wang, L. Huang, L. Chi, Front. Mater., 7, 245 (2020). DOI: 10.3389/fmats.2020.00245
- D. Guo, S. Ikeda, K. Saiki, J. Appl. Phys., 99 (9), 094502 (2006). DOI: 10.1063/1.2193055
- D. Guo, S. Ikeda, K. Saiki, J. Appl. Phys., 105 (11), 113520 (2009). DOI: 10.1063/1.3132824
- T. Ahn, H. Jung, H.J. Suk, M.H. Yi, Synth. Met., 159 (13), 1277 (2009). DOI: 10.1016/j.synthmet.2009.02.023
- D.W. Chou, C.J. Huang, C.M. Su, C.F. Yang, W.R. Chen, T.H. Meen, Solid State Electron., 61 (1), 76 (2011). DOI: 10.1016/j.sse.2011.01.003
- H.S. Shin, H.J. Yun, K.H. Baek, Y.H. Ham, K.S. Park, D.P. Kim, G.W. Lee, H.D. Lee, K. Lee, L.M. Do, J. Nanosci. Nanotechnol., 12 (7), 5325 (2012). DOI: 10.1166/jnn.2012.6253
- Lassnig, B. Striedinger, M. Hollerer, A. Fian, B. Stadlober, A. Winkler, J. Appl. Phys., 116 (11), 114508 (2014). DOI: 10.1063/1.4895992
- Y.J. Lin, H.Y. Tsao, Microelectron. Eng., 149 (C), 57 (2016). DOI: 10.1016/j.mee.2015.09.014
- T. Siegrist, C. Besnard, S. Haas, M. Schiltz, P. Pattison, D. Chernyshov, B. Batlogg, C. Kloc, Adv. Mater., 19 (16), 2079 (2007). DOI: 10.1002/adma.200602072
- S. Jo, M. Takenaga, Jpn. J. Appl. Phys., 49 (7R), 078002 (2010). DOI: 10.1143/JJAP.49.078002
- A. Tsumura, H. Koezuka, T. Ando, Appl. Phys. Lett., 49 (18), 1210 (1986). DOI: 10.1063/1.97417
- L.G. Kudryashova, M.S. Kazantsev, V.A. Postnikov, V.V. Bruevich, Y.N. Luponosov, N.M. Surin, O.V. Borshchev, S.A. Ponomarenko, M.S. Pshenichnikov, D.Y. Paraschuk, ACS Appl. Mater. Interfaces, 8 (16), 10088 (2016). DOI: 10.1021/acsami.5b11967
- P. Nevcas, D. Klapetek, Gwiddion software [Electronic resource]. URL: http://gwyddion.net/
- D. Zotkin, A. Sizov, Probestation software: 1.13.
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