Technical Physics Letters

To authors

Volumes and Issues

2023
- 1 2 3 4 5 6 7 8 9 10 11 12
2022
- 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Titanium Oxynitride Thin Films Wide Temperature Range Sensors

DOI: 10.21883/TPL.2022.10.54805.19292

Baron F. A.¹, Shanidze L. V.¹, Rautskiy M. V.¹, Mikhlin Yu. L.², Lukyanenko A. V.¹, Konovalov S. O.³, Zelenov F. V.³, Shvets P. V.⁴, Goikhman A. Yu.⁴, Volkov N. V.¹, Tarasov A. S. ¹

¹Kirensky Institute of Physics, Federal Research Center KSC SB, Russian Academy of Sciences, Krasnoyarsk, Russia
²Institute of Chemistry and Chemical Technology, Federal Research Center KSC SB RAS, Russian Academy of Sciences, Krasnoyarsk, Russia
³Siberian State University of Science and Technology, Krasnoyarsk, Russia
⁴Research and Education Center “Functional Nanomaterials”, Immanuel Kant Baltic Federal University, Kaliningrad, Russia

Email: filippbaron@mail.ru, baron@iph.krasn.ru

PDF

Abstract
References
Статистика просмотров

The temperature dependence of the resistivity of titanium oxynitride TiN_xO_y thin films with different oxygen and nitrogen content obtained by atomic layer deposition was investigated. We found that the resistance of all films monotonically decreased with increasing temperature and varied within a wide range depending on the chemical composition and thickness of the film. The technology for obtaining a compact temperature sensor of wide range from helium to room temperature based on 40 nm thick TiN_0.87O_0.97 is presented. Keywords: titanium oxide-nitride, temperature sensors, thin films, atomic layer deposition, integrated circuit components.

N.D. Cuong, D.J. Kim, B.D. Kang, S.G.J. Yoon, Electrochem. Soc., 153, G856 (2006). DOI: 10.1149/1.2219707
S. Iwashita, S. Aoyama, M. Nasu, K. Shimomura, N. Noro, T. Hasegawa, Y. Akasaka, K. Miyashita, J. Vac. Sci. Technol. A, 34, 01A145 (2016). DOI: 10.1116/1.4938106
R. Asahi, T. Morikawa, T. Ohwaki, K. Aoki, Y. Taga, Science, 293, 269 (2001). DOI: 10.1126/science.1061051
E. Martinez-Ferrero, Y. Sakatani, C. Boissiere, D. Grosso, A. Fuertes, J. Fraxedas, C. Sanchez, Adv. Funct. Mater., 17, 3348 (2007). DOI: 10.1002/adfm.200700396
M. Lazarov, P. Raths, H. Metzger, W. Spirkl, J. Appl. Phys., 77, 2133 (1995). DOI: 10.1063/1.358790
A. Rizzo, M.A. Signore, L. Tapfer, E. Piscopiello, A. Cappello, E. Bemporad, M. Sebastiani, J. Phys. D: Appl. Phys., 42, 115406 (2009). DOI: 10.1088/0022-3727/42/11/115406
X. Yang, Y. Lin, J. Liu, W. Liu, Q. Bi, X. Song, J. Kang, F. Xu, L. Xu, M.N. Hedhili, D. Baran, X. Zhang, T.D. Anthopoulos, S. De Wolf, Adv. Mater., 32, 2002608 (2020). DOI: 10.1002/adma.202002608
S.S. Courts, P.R. Swinehart, AIP Conf. Proc., 684, 393(2003). DOI: 10.1063/1.1627157
C.J. Yeager, S.S. Courts, IEEE Sensors J., 1, 352 (2001). DOI: 10.1109/7361.983476
E.S. Kiseleva, Fiziko-mekhanicheskie svoistva i struktura plenok dioksida i oksinitrida titana, osazhdennykh metodom reaktivnogo magnetronnogo raspyleniya, Candidate's Dissertation in Mathematics and Physics (Nats. Issled. Tomsk. Politekh. Univ., Tomsk, 2016) (in Russian)
J.-M. Chappe, N. Martin, J. Lintymer, F. Sthal, G. Terwagne, J. Takadoum, Appl. Surf. Sci., 253, 5312 (2007). DOI: 10.1016/j.apsusc.2006.12.004
F.A. Baron, Y.L. Mikhlin, M.S. Molokeev, M.V. Rautskiy, I.A. Tarasov, M.N. Volochaev, L.V. Shanidze, A.V. Lukyanenko, T.E. Smolyarova, S.O. Konovalov, F.V. Zelenov, A.S. Tarasov, N.V. Volkov, ACS Appl. Mater. Interfaces, 13, 32531 (2021). DOI: 10.1021/acsami.1c08036
M. Mayer, AIP Conf. Proc., 475, 541 (1999). DOI: 10.1063/1.59188
L.V. Shanidze, A.S. Tarasov, M.V. Rautskiy, F.V. Zelenov, S.O. Konovalov, I.V. Nemtsev, A.S. Voloshin, I.A. Tarasov, F.A. Baron, N.V. Volkov, Appl. Sci., 11, 7498 (2021). DOI: 10.3390/app11167498

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Institute Officers:

Contact us: