Study of the photovoltaic properties of GaPN(As) heterostructures on silicon substrates
Nikitina E. V.1,2, Kaveev A. K.1, Fedorov V. V.2, Sinitskaya O. A.2, Khrul S. N.2, Yakovlev G. E.3, Gudovskikh A. S.2
1Ioffe Institute, St. Petersburg, Russia
2Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
3St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
Email: mail.nikitina@mail.ru
This paper presents studies of photovoltaic properties of p-i-n heterostructures based on solid solutions GaPN and GaPNAs, which where grown on silicon substrates. Studies of current-voltage characteristics and external quantum efficiency spectra have demonstrated that structures based on quadruple solid solutions GaPNAs have a greater potential compared to triple solid solutions GaPN that do not contain arsenic. For the GaPNAs-based structures, despite a narrower bandgap, a higher open-circuit voltage (0.78 V) was achieved compared to p-i-n GaPN heterostructures, which indicates a lower defect concentration in the GaPNAs layers. Keywords: dilute nitrides, GaPN(As) on a silicon substrate, p-i-n heterostructures.
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