Influence of Buffer Layer Design on the Photoluminescence of InAs Quantum Dots Grown on GaAs/Si(100) Substrates
Lendyashova V. V.
1,2, Talalaev V. G.
1, Kirilenko D. A.3, Kalinichev A. A.
1, Shugabaev T.
1,2, Pozdeev V. A.
2, Andreeva A. S.1,2, Shtrom I. V.
4, Reznik R. R.
1,2, Cirlin G. E.
1,2,3,4, Ilkiv I. V.
1,2
1St. Petersburg State University, St. Petersburg, Russia
2Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
3Ioffe Institute, St. Petersburg, Russia
4Institute for Analytical Instrumentation of the Russian Academy of Sciences, Saint Petersburg, Russia
Email: erilerican@gmail.com, fiskerr@ymail.com
The synthesis of GaAs layers on on-axis Si(100) substrates using a Si buffer layer is presented. It is shown that the use of an elastically strained In0.1Ga0.9As layer and In0.15Ga0.85As/GaAs superlattices, combined with cyclic thermal annealing, makes it possible to obtain relatively thin templates with smooth surfaces and a surface dislocation density of ~ 8· 107 cm-2. Heterostructures with quantum dots based on such buffer layers exhibit photoluminescence at λ~ 1250 nm at 300 K and carrier lifetimes comparable to those of similar structures grown on lattice-matched GaAs substrates. The obtained results demonstrate the feasibility of creating efficient light-emitting quantum dot heterostructures on silicon. Keywords: Indium gallium arsenide, quantum dots in a quantum well, molecular beam epitaxy, semiconductors, silicon, transmission electron microscopy, photoluminescence.
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