Technical Physics Letters
Volumes and Issues
The influence of oxide buffer layers on the formation of catalytic nanoparticles and carbon nanotubes
Khudaykulov I. Kh.1, Rakhimov A. A.1, Ismatov A. A.1, Adilov M. M.1
1Institute of Ion-Plasma Technologies, Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan
Email: i_khudaykulov@mail.ru

PDF
The morphology of Ni nanoparticles synthesized on SiO2 and TiO2 buffer layers, as well as carbon nanotubes grown on them, was studied. Scanning electron microscopy and transmission electron microscopy analysis revealed that nanoparticles formed on the TiO2 surface have increased size and low surface density, which leads to the formation of a limited number of carbon nanotube nuclei and reduced homogeneity. In contrast, nanoparticles on the SiO2 surface have a smaller average diameter, a nearly spherical shape, a uniform distribution, and are characterized by high density. As a result, the synthesized carbon nanotubes are characterized by an ordered structure, a narrow diameter range (5-25 nm), and a high level of crystallinity. These results allow us to recommend the SiO2 buffer layer as an effective catalyst platform. Keywords: Carbon nanotubes, buffer layers, nanoparticles, CVD synthesis, morphology, transmission electron microscopy, scanning electron microscopy, crystallinity, amorphous carbon, catalytic particles.
  1. R.S. Ruoff, D. Qian, W.K. Liu, Compt. Rend. Phys., 4 (9), 993 (2003). DOI: 10.1016/j.crhy.2003.08.001
  2. X.F. Sanchez-Romate, A. Jimenez-Suarez, A. Urena, in Handbook of carbon nanotubes (Springer, Cham, 2022), p. 213--247
  3. C.J. Barnett, C.E. Gowenlock, K. Welsby, A. Orbaek White, A.R. Barron, Nano Lett., 18 (2), 695 (2018). DOI: 10.1021/acs.nanolett.7b03390
  4. S. Berber, Y.K. Kwon, D. Tomanek, Phys. Rev. Lett., 84 (20), 4613 (2000). DOI: 10.1103/PhysRevLett.84.4613
  5. J. Hone, M. Whitney, C. Piskoti, A. Zettl, Phys. Rev. B, 59 (4), R2514 (1999). DOI: 10.1103/PhysRevB.59.R2514
  6. A. Wang, Z. Zhang, Y. Liu, Z. Li, J. Leng, Carbon, 225, 119105 (2024). DOI: 10.1016/j.carbon.2024.119105
  7. M. Horibe, M. Nihei, D. Kondo, A. Kawabata, Y. Awano, Jpn. J. Appl. Phys., 44 (7R), 5309 (2005). DOI: 10.1143/JJAP.44.5309
  8. A.T. Lawal, Carbon Trends, 19, 100470 (2025). DOI: 10.1016/j.cartre.2025.100470
  9. G.G. Bizuneh, A.M. Adam, J. Ma, Battery Energy, 2 (1), 20220021 (2023). DOI: 10.1002/bte2.20220021
  10. L. Ci, J. Suhr, V. Pushparaj, X. Zhang, P.M. Ajayan, Nano Lett., 8 (9), 2762 (2008). DOI: 10.1021/nl8012715
  11. H.M. Dewey, A. Lamb, J. Budhathoki-Uprety, Nanoscale, 16 (35), 16344 (2024). DOI: 10.1039/d4nr01892c
  12. A. Nylander, J. Hansson, M. Kabiri Samani, C. Chandra Darmawan, A. Borta Boyon, L. Divay, J. Liu, Energies, 12 (11), 2080 (2019). DOI: 10.3390/en12112080
  13. Y. Wang, B. Li, P.S. Ho, Z. Yao, L. Shi, Appl. Phys. Lett., 89 (18), 183113 (2006). DOI: 10.1063/1.2382735
  14. T. de los Arcos, M.G. Garnier, P. Oelhafen, D. Mathys, J.W. Seo, C. Domingo, J.V. Garcia-Ramos, S. Sanchez-Cortes, Carbon, 42 (1), 187 (2004). DOI: 10.1016/j.carbon.2003.10.020
  15. Y.J. Jung, B. Wei, R. Vajtai, P.M. Ajayan, Y. Homma, K. Prabhakaran, T. Ogino, Nano Lett., 30 (4), 561 (2003). DOI: 10.1021/nl034075n
  16. N. Nagaraju, A. Fonseca, Z. Konya, J.B. Nagy, J. Mol. Catal. A, 181 (1-2), 57 (2002). DOI: 10.1016/S1381-1169(01)00375-2
  17. G.B. Zheng, H. Sano, Y. Uchiyama, Mater. Sci. Forum, 544- 545, 773 (2007). DOI: 10.4028/www.scientific.net/MSF.544-545.773
  18. Y. Wang, Z. Luo, B. Li, P.S. Ho, Z. Yao, L. Shi, E.N. Bryan, R.J. Nemanich, J. Appl. Phys., 101 (12), 124310 (2007). DOI: 10.1063/1.2749412
  19. T.K. Turdaliev, K.K. Zokhidov, F.I. Abdurakhmanov A.A. Rakhimov, K.B. Ashurov, Phys. Solid State, 66 (7), 1158 (2024). DOI: 10.61011/PSS.2024.07.58992.115
  20. R. Saito, A. Gruneis, Ge.G. Samsonidze, V.W. Brar, G. Dresselhaus, M.S. Dresselhaus, A. Jorio, L.G. Can cado, C. Fantini, M.A. Pimenta, A.G. Souza Filho, New J. Phys., 5 (1), 157 (2003). DOI: 10.1088/1367-2630/5/1/157
Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru