Leshchenko E. D.1, Dubrovskii V. G.2
1Submicron Heterostructures for Microelectronics, Research & Engineering Center, RAS, Saint-Petersburg, Russia
2St. Petersburg State University, St. Petersburg, Russia
Email: leshchenko.spb@gmail.com
The formation of Au-catalyzed InPxAs1-x and InSbxAs1-x nanowires has been studied theoretically. Taking into account the desorption, we have studied the influence of the III/V flux ratio and temperature on the nanowire composition. Using the Au-catalyzed InPxAs1-x nanowires as an example, we have shown that the Au concentration has no effect on the vapor-solid distribution but affects the total concentration of group V elements. The study has shown that the total concentration of group V elements is low (about 1-2 %). Comparison of the theoretical results with available experimental data have demonstrated a good agreement. Keywords: modeling, III-V nanowires, chemical composition, ternary compounds.
- F. Glas, Phys. Rev. B, 74, 121302 (2006). DOI: 10.1103/PhysRevB.74.121302
- K.A. Dick, P. Caroff, J. Bolinsson, M.E. Messing, J. Johansson, K. Deppert, L.R. Wallenberg, L.Samuelson, Semicond. Sci. Technol., 25, 024009 (2010). DOI: 10.1088/0268-1242/25/2/024009
- V.G. Dubrovskii, T. Xu, A.D. Alvarez, S.R. Plissard, P. Caroff, F. Glas, B. Grandidier, Nano Lett., 15, 5580 (2015). DOI: 10.1021/acs.nanolett.5b02226
- E.S. Koivusalo, T.V. Hakkarainen, M.D. Guina, V.G. Dubrovskii, Nano Lett., 17, 5350 (2017). DOI: 10.1021/acs.nanolett.7b01766
- X. Yuan, D. Pan, Y. Zhou, X. Zhang, K. Peng, B. Zhao, M. Deng, J. He, H.H. Tan, C. Jagadish, Appl. Phys. Rev., 8, 021302 (2021). DOI: 10.1063/5.0044706
- J. Wallentin, M.T. Borgstrom, J. Mater. Res., 26, 2142 (2011). DOI: 10.1557/jmr.2011.214
- B.D. Liu, J. Li, W.J. Yang, X.L. Zhang, X. Jiang, Y. Bando, Small, 13, 170199 (2017). DOI: 10.1002/smll.201701998
- R.S. Wagner, W.C. Ellis, Appl. Phys. Lett., 4, 89 (1964). DOI: 10.1063/1.1753975
- P. Krogstrup, R. Popovitz-Biro, E. Johnson, M.H. Madsen, J. Nygard, H. Shtrikman, Nano Lett., 10, 4475 (2010). DOI: 10.1021/nl102308k
- P. Caroff, M.E. Messing, M. Borg, K.A. Dick, K. Deppert, L.E. Wernersson, Nanotechnology, 20, 495606 (2009). DOI: 10.1088/0957-4484/20/49/495606
- F. Jabeen, S. Rubini, F. Martelli, Microelectron. J., 40, 442 (2009). DOI: 10.1016/j.mejo.2008.06.001
- M. Ghasemi, E.D. Leshchenko, J. Johansson, Nanotechnology, 32, 072001 (2021). DOI: 10.1088/1361-6528/abc3e2
- E. Barrigon, M. Heurlin, Z. Bi, B. Monemar, L. Samuelson, Chem. Rev., 119, 9170 (2019). DOI: 10.1021/acs.chemrev.9b00075
- E.D. Leshchenko, V.G. Dubrovskii, Nanomaterials, 13, 1659 (2023). DOI: 10.3390/nano13101659
- G. Priante, F. Glas, G. Patriarche, K. Pantzas, F. Oehler, J.-C. Harmand, Nano Lett., 16, 1917 (2016). DOI: 10.1021/acs.nanolett.5b05121
- V.G. Dubrovskii, A.A. Koryakin, N.V. Sibirev, Mater. Des., 132, 400 (2017). DOI: 10.1016/j.matdes.2017.07.012
- J. Johansson, M. Ghasemi, Phys. Rev. Mater., 1, 040401 (2017). DOI: 10.1103/PhysRevMaterials.1.040401
- R. Sjokvist, D. Jacobsson, M. Tornberg, R. Wallenberg, E.D. Leshchenko, J. Johansson, K.A. Dick, J. Phys. Chem. Lett., 12, 7590 (2021). DOI: 10.1021/acs.jpclett.1c02121
- D. McLean, Grain boundaries in metals (Oxford University Press, N.Y., 1957)
- V.G. Dubrovskii, E.D. Leshchenko, Phys. Rev. Mater., 7, 074603 (2023). DOI: 10.1103/PhysRevMaterials.7.074603
- V.G. Dubrovskii, Phys. Rev. Mater., 7, 096001 (2023). DOI: 10.1103/PhysRevMaterials.7.096001
- V.G. Dubrovskii, Nanomaterials, 14, 207 (2024). DOI: 10.3390/nano14020207
- V.G. Dubrovskii, E.D. Leshchenko, Nanomaterials, 14, 1333 (2024). DOI: 10.3390/nano14161333
- E.D. Leshchenko, M. Ghasemi, V.G. Dubrovskii, J. Johansson, CrystEngComm, 20, 1649 (2018). DOI: 10.1039/C7CE02201H
- A.I. Persson, M.T. Bjork, S. Jeppesen, J.B. Wagner, L.R. Wallenberg, L. Samuelson, Nano Lett., 6, 403 (2006). DOI: 10.1021/nl052181e
- B.M. Borg, K.A. Dick, J. Eymery, L.-E. Wernersson, Appl. Phys. Lett., 98, 113104 (2011). DOI: 10.1063/1.3566980
- E.D. Leshchenko, V.G. Dubrovskii, Nanotechnology, 34, 065602 (2023). DOI: 10.1088/1361-6528/aca1c9