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Synthesis and characterization of GexNi1-x composite films obtained by deposition of germanium and nickel
Suleimanov N.M.
1, Abdullina A.A. 2, Bazarov V.V.
1, Lyadov N.M.
1, Khanov N.R.1,2, Shustov V.A.
1
1Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center of RAS, Kazan, Russia
2Kazan State Power Engineering University, Kazan, Russia
2Kazan State Power Engineering University, Kazan, Russia
Email: nail.suleimanov@mail.ru, vbazarov1@gmail.com, nik061287@mail.ru, shustov@kfti.knc.ru
A series of GexNi1-x films were synthesized on single-crystal silicon substrates using direct-current magnetron sputtering in a high-vacuum chamber. The films were produced by simultaneous sputtering of two targets: semiconductor germanium and metallic nickel. The chemical composition of the films was studied by X-ray photoelectron spectroscopy. It has been established that thermal annealing of films leads to the formation of a nickel germanide (NiGe) phase. Scanning electron microscopy has revealed areas that can be attributed to this phase. Keywords: electrode materials, metal nanoparticles, electrocatalytic activity, semiconductor nanostructured systems.
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